HUF76629D3ST-F085 Discrete Semiconductor Products

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HUF76629D3ST is a FET (Field Effect Transistor) manufactured by ON Semiconductor. The FET is a three-terminal device, consisting of a source (S), drain (D), and gate (G). The core principle of a FET is that when a voltage is applied to the gate, a conductive channel is created in the semiconductor material allowing current to flow between the source and drain when a voltage is applied. The type of FET used in the HUF76629D3ST is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is a type of FET that utilizes an insulated gate to control the flow of current. The HUF76629D3ST is a single high-voltage transistor with a drain voltage of up to 100V and a source voltage of up to 25V.

The HUF76629D3ST-F085 is an ideal device for a variety of applications. It can be found being used in high-frequency switching, audio amplifiers, drivers for DC and AC motors, solar panels, and in photovoltaic cells. In addition, it can be utilized for active filtering applications due to its low input and output capacitance, enabling high gain and fast switching speeds. The high voltage capabilities of the transistor make it well-suited for high-voltage power supplies and circuits.

The working principle of the HUF76629D3ST-F085 is based on the basic principles of a MOSFET. When a positive voltage is applied to the gate of the transistor, a conductive channel is created in the semiconductor material, allowing current to flow from the source to the drain. The magnitude of the current flow is dependent on the gate voltage and the resistance of the channel created in the semiconductor material. As the gate voltage increase, the current flow increases; as the gate voltage decreases, the current flow decreases. Therefore, by changing the gate voltage, the HUF76629D3ST-F085 can be used to control the current flow

The HUF76629D3ST-F085 is a powerful high voltage transistor capable of handling up to 100 volts and is suitable for many applications. It has low input and output capacitances, enabling the transistor to be used for high-frequency switching and active filtering applications. The transistor has a wide range of drain voltage, making it ideal for high-voltage power supplies and circuits. Finally, using the transistor’s gate voltage, the current flow can be precisely controlled.

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