HUF75329D3S

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The HUF75329D3S is a single insulated gate field effect transistor (FET) from NXP semiconductors. It is a P-channel enhanced MOSFET with a high-voltage tolerance, low-on-state resistance and fast switching capability. This transistor is commonly used in automotive applications, such as lighting, battery management and powertrain applications.

The HUF75329D3S offers superior electrical performance for automotive applications. It has an RDS (on) of 5 mΩ and a low turn-on threshold voltage of -1.3 V. This allows for fast switching with minimal losses while on. It also has an extremely wide VDS range of -55 V to -200 V, making it suitable for high voltage applications.

The working principle behind this FET is simple. When a voltage is applied to the gate, it induces a radiating electric field. This electric field repels electrons in the P-channel and creates a depletion region. This region is depleted of mobile charge carriers and acts as an insulator between the source and drain. When the voltage on the gate is decreased, the P-channel is filled with charge carriers and it can then conduct current between the source and the drain.

The HU75329D3S is an indispensable part for automotive applications that require high voltage tolerance, low RDS (on) and fast switching capability. Its superb electrical performance makes it ideal for use in lighting, battery management and powertrain applications.

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