HUF75645S3ST Discrete Semiconductor Products |
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Allicdata Part #: | HUF75645S3STTR-ND |
Manufacturer Part#: |
HUF75645S3ST |
Price: | $ 1.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 75A D2PAK |
More Detail: | N-Channel 100V 75A (Tc) 310W (Tc) Surface Mount D²... |
DataSheet: | HUF75645S3ST Datasheet/PDF |
Quantity: | 2400 |
800 +: | $ 1.26226 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 310W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3790pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 238nC @ 20V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The HUF75645S3ST is a field effect transistor (FET) designed to amplify or switch electrical signals. It is an N-channel MOSFET that works differently from a traditional bipolar junction transistor. It uses an electric field to activate an electrical current when voltage is applied across the gate-source terminals connected to a metal oxide semiconductor layer. The type of FET used in the HUF75645S3ST is a single device, meaning it is composed of only one MOSFET device.
The HUF75645S3ST is widely used in various applications due to its low input capacitance and low on-resistance. It is typically used for applications such as electric signal amplification, signal switching, signal switching for power supplies, electric power regulation, signal level calibration, signal feedback control, and electric pulse shaping. It is also used for signal coupling and signal transmission, and the electric current needed to make the transistor turn on or off can come from the same source or different sources.
This type of FET is particularly useful for controlling high frequency signals because it has a low capacitance, which reduces distortion and allows for faster switching. Additionally, its low on-resistance allows it to produce a high gain and lower power consumption.
The working principle of the HUF75645S3ST is simple. When voltage is applied across the gate-source terminals, it creates an electric field and the current flows between the source and drain. This current is then regulated depending on the electric charge stored in the gate-source. As the voltage applied increases, so does the stored electric charge, which then decreases the current between the source and the drain.
The electric field produced across the gate-source terminals can also be used for different operations, such as amplification and signal switching. The electric field and the current flow between the source and the drain are used to control the electric output from the drain. For example, when a higher voltage is applied to the gate-source, the current flow between the source and the drain increases, and the electric output from the drain increases as well. Similarly, when a lower voltage is applied to the gate-source, the current between the source and the drain decreases and the electric output from the drain decreases.
Using the principles of electric fields, the HUF75645S3ST is used in various types of applications. It is used in amplifiers, signal switching, power regulation, signal level calibration, signal feedback control, signal coupling and signal transmission, electric power switching, and electric pulse shaping. It is also used in consumer products such as car radios, remote controls, and home audio equipment.
The HUF75645S3ST is a low-power, low-capacitance, low-on-resistance field effect transistor that can be used for a variety of applications. It is designed to control electric current between the source and drain when voltage is applied across the gate-source. Additionally, the electric field produced across the gate-source can be used for operations such as signal amplification and signal switching. This makes the HUF75645S3ST a very versatile device for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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