Allicdata Part #: | HUF75309D3ST-ND |
Manufacturer Part#: |
HUF75309D3ST |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 19A DPAK |
More Detail: | N-Channel 55V 19A (Tc) 55W (Tc) Surface Mount D-Pa... |
DataSheet: | HUF75309D3ST Datasheet/PDF |
Quantity: | 1000 |
Series: | UltraFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 55W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The HUF75309D3ST is a n-channel MOSFET that is specially designed as a high-performance power transistor. It is suitable for a variety of applications, most notably in audio and power management circuits. This article will discuss the application fields and working principle of the HUF75309D3ST.
The HUF75309D3ST has a 500 V maximum gate-source voltage rating and is capable of handling up to 30 A of continuous drain current. This MOSFET is based on the powerTrench process, which offers a high-performance, low-capacitance switch for high-frequency applications. This transistor offers low gate-drain and gate-source capacitance, low gate-leakage current, and improved on-resistance. The device features a low threshold voltage, making it ideal for use in circuits with limited power supply voltages.
The HUF75309D3ST is designed for use in audio, power management, and switching applications. In audio applications, it can be used to accurately drive dynamic speakers, as it is able to deliver high output power with low distortion. In power management applications, the transistor can be used as a power switch to control the flow of current to various electronic components. In switching applications, the transistor can be used to switch rapidly between two conditions, such as on and off, while consuming low amounts of power.
The working principle of the HUF75309D3ST is based on the flow of charge carriers in an electric field. When a voltage is applied to the gate terminal, the transistor\'s internal electric field is activated, which causes the source and drain terminals to draw charge carriers from the source. This creates a path for current to flow from the source to the drain. The amount of current that can flow through this path is determined by the voltage applied to the gate and the resistance of the drain.
The HUF75309D3ST is an excellent choice for a variety of applications, as it offers a high performance and low power consumption in a small package. It can be used for audio applications, power management, and switching applications. Its working principle is based on the flow of charge carriers in an electric field, allowing it to rapidly switch between two conditions while consuming low amounts of power.
The specific data is subject to PDF, and the above content is for reference
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