Allicdata Part #: | HUF76629D3S-ND |
Manufacturer Part#: |
HUF76629D3S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 20A DPAK |
More Detail: | N-Channel 100V 20A (Tc) 110W (Tc) Surface Mount TO... |
DataSheet: | HUF76629D3S Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1285pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 52 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The HUF76629D3S is a MOSFET transistor designed and manufactured by Toshiba Corporation. It is a single-gate insulated gate bipolar transistor (IGBT) that is designed to switch higher power and is ideal for applications that require a fast switching speed. This transistor is capable of carrying currents of up to 8 amps and can operate at a very high frequency of up to 200kHz.
The HUF76629D3S is a compact, low-cost MOSFET transistor that can be used in many applications including motor control and power conversion. It is also used in high-efficiency switching circuits in applications such as motor drives, lamps, and heaters. The low on-state resistance of this device makes it an ideal choice for high-efficiency motors, as it can reduce power loss and increase power efficiency. The low gate-source capacitance of the transistor also makes it suitable for high-frequency operation. In addition, the ruggedness of the transistor makes it suitable for harsh operating environments.
The HUF76629D3S is a static-gate insulated gate bipolar transistor (IGBT). It works by controlling the flow of current with a gate voltage. When the gate voltage is applied, the flow of electrons between the source and the drain is increased. This increases the flow of current that is supplied to the drain, which in turn controls the voltage and current of the device. The transistor works by controlling the flow of current that passes through the drain-source region when the gate voltage is applied. The static-gate device has an advantage in comparison to other transistors because it can handle higher currents and can operate at higher frequencies.
In terms of operation, the HUF76629D3S must be properly driven by applying the correct voltage and current levels. It is important to note that the voltage on the gate must be higher than the source voltage in order to turn on the device and pass current. The gate voltage must also remain higher than the source voltage when the device is on to maintain the flow of current. The voltage on the source should also be in the range of 3 volts to 15 volts to ensure that the transistor is operating correctly. Additionally, the transistor must be properly heat-sunk to ensure that it does not overheat and cause damage.
In terms of application fields, the HUF76629D3S is typically used in motor control, power conversion and high-efficiency switching circuits. It is a great choice for many applications due to its low cost and high performance. Additionally, the transistor is rugged enough to be used in harsh environments and can operate at high frequencies. Furthermore, this device is capable of carrying high current, which makes it an excellent choice for motor control applications.
In conclusion, the HUF76629D3S is a great choice for many applications. It is a single-gate insulated gate bipolar transistor (IGBT) designed and manufactured by Toshiba Corporation. It is a low-cost MOSFET transistor that can carry high currents and can operate at high frequencies. It is typically used in motor control, power conversion, and high-efficiency switching circuits. The device must be properly driven, and heat-sunk in order to ensure that it functions correctly.
The specific data is subject to PDF, and the above content is for reference
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