Allicdata Part #: | HUF76429D3S-ND |
Manufacturer Part#: |
HUF76429D3S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 20A DPAK |
More Detail: | N-Channel 60V 20A (Tc) 110W (Tc) Surface Mount TO-... |
DataSheet: | HUF76429D3S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1480pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HUF76429D3S is a type of Field Effect Transistor (FET), more specifically a metal-oxide-semiconductor FET (MOSFET) with single (N-channel) design. A FET is a type of unipolar transistor, meaning that it is made up of only one type of charge carrier, which is usually electrons or holes. This makes them useful for amplifying or switching electrical signals.
The HUF76429D3S MOSFET was designed as an semiconductor device for both linear and switching applications. It is currently used in a wide range of applications, including audio amplifiers, voltage regulators, power supply circuits, signal level converters, oscillators, and amplifier circuits. The device is able tooffer low power consumption, low gate to source capacitance, and low on-resistance. It is therefore suitable for use in high performance signal processing.
The working principle behind the HUF76429D3S is quite simple. A potential difference applied between its gate and source will cause the channel between them to be turned on or off. The gate acts as a control voltage, and when a voltage is applied to it, it causes a current to flow through the channel. This current is then able to flow from the source to the drain, with the device acting as a switch that turns on or off the current depending on the voltage applied to the gate.
The main advantages of using MOSFETs such as the HUF76429D3S are their low power consumption, low on-resistance, and low gate to source capacitance. They are also able to switch signals quickly and accurately, and can withstand higher voltages than traditional transistors. This makes them suitable for audio amplifiers, voltage regulators, and other applications where power efficiency and performance are key.
In addition to the wide range of applications it is used in, the HUF76429D3S also has some distinct advantages. It offers excellent switching speed and performance, low power consumption and low on-resistance. It is also able to operate at very high frequencies, making it ideal for use in high performance signal processing applications. This makes the HUF76429D3S an excellent choice for a variety of applications where performance, power efficiency and speed are key.
Overall, the HUF76429D3S is a useful and versatile device for a variety of applications. It has the ability to provide excellent switching performance, low on-resistance, and power efficiency, making it a great choice for high performance signal processing. It is also able to withstand high voltage, low power consumption and high frequency operation, making it an ideal choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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