HUF75329S3

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	128W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1060pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	75nC @ 20V
Series:	UltraFET™
Rds On (Max) @ Id, Vgs:	24 mOhm @ 49A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	49A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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HUF75329S3 Application Field and Working Principle

HUF75329S3 is a highly reliable standard-level N-channel enhancement mode vertical D-MOS field effect transistor (DMOSFET). This sophisticated product is known for its efficient signal switching and low on-resistance performance, making it an optimal choice for any low power/low voltage application requiring low current protection. HUF75329S3 is available in a thumbnail-sized plastic SIP package (3 Ω), allowing for a wide range of applications.This versatile transistor has numerous applications and is intendedly used in switch and DC motor drivers, low current protection in CFL lamps, and other equipment using digital switching circuit. It can also be used to power supplies, laptop chargers, and AC/DC converters. HUF75329S3 has a total gate charge ( Q g ) of 4.7nC, on-resistance ( RDS (on) ) of 4 Ω and threshold voltage ( Vth ) of -1.8V, and is ideal for high-speed operations and power dissipation with DC motor drivers. This product allows a higher transient thermal resistance which is necessary to reduce the frequency limits of signal stealing and facilitate circuit configuration.The primary structure of a MOSFET device is composed of three terminals, the drain, gate, and source. The draining terminal essentially forms the load endpoint for the incoming electric charge. The gate terminal is the control electrode where the input electric charge arriving from outside source is applied for controlling the switching of the MOSFET device. The source terminal, on the other hand, is basically the output terminal for the electric charge of the MOSFET device.Under a typical operating condition, the electric charge, which arrives from the external source, is applied to the DN terminal. The electric charge then passes through the gate, to the source terminal. When the gate voltage applied to the gate terminal i.e. the input voltage is increased, it shall reduce the channel resistance between the DN and source terminal. This in turn increases the electric charge, which flows through the path of the MOSFET device.In a power MOSFET, the current-voltage (I-V) characteristics can be divided into four regions: Cutoff, Ohmic, Saturation and Reverse Breakdown. In the cutoff region, the MOSFET is off, thus undergoing no current. As the gate voltage increases, the MOSFET is switched on and enters the ohmic region, where the drain current is directly proportional to the gate voltage. As the gate voltage is further increased, the MOSFET enters the saturation region, where a further increase in the gate voltage results in a decrease of Drain-Source resistance (RDS). Finally, the drain voltage returns to the 0V when the MOSFET enters the Reverse Breakdown region. In addition, a load resistor is commonly used in power MOSFETs circuit to reduce the occurrence of thermal runaway and to increase the system\'s stability when the transistor turns on. This will reduce the switching speed of the device, but it will also reduce the possibility of thermal runaway. Furthermore, it is important to note the amount of gate voltage necessary to turn on the device. This is known as the “Vthreshold” (Vth). The Vthreshold of HUF75329S3 is -1.8V, so the gate voltage must be higher than -1.8V for the device to turn on. In conclusion, HUF75329S3 is an efficient and reliable enhancement-mode N-channel vertical D-MOSFET which has a wide range of applications. When used in a circuit, the device features a low RDS(ON) and Qg, allowing for a high switching speed and low power dissipation. The MOSFET will remain off when Vgs is below the Vthreshold and is switched on when Vgs is higher than Vthreshold. Additionally, a proper load resistor should be used in the circuit to ensure the system’s stability.

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