Allicdata Part #: | HUF76419S3ST-ND |
Manufacturer Part#: |
HUF76419S3ST |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 29A D2PAK |
More Detail: | N-Channel 60V 29A (Tc) 75W (Tc) Surface Mount D²PA... |
DataSheet: | HUF76419S3ST Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 29A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 29A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The HUF76419S3ST is a field effect transistor (FET) designed for surface mount applications. This semiconductor device is generally used in power management and switching applications and is known for its low-onstate resistance and high side-gate threshold voltage. It features both an N-Channel and a P-Channel technology and is capable of both low on-state resistance and high side-gate threshold voltage. This FET is also known for its ultra-low gate leakage.
In terms of its application field, the HUF76419S3ST is most often used in AC/DC power supplies, say a 12V to 15V converter, or the variable AC (220V) to DC (12V) power adapter type converter. The FET is also suitable for load status control and signal amplification of various electronic circuits. It is particularly useful in power management systems, where it is used to regulate the output power of the device, as well as in switching applications, where it is used to switch on and off power to other devices. Additionally, it is used in various medical and automotive applications and is ideal for controlling the flow of current.
The HUF76419S3ST is also noteworthy for its low voltage-threshold trigger level. It has a threshold voltage of less than 0.296 Volts, which is ideal for applications that require a highly sensitive control. To further enhance its performance, the device has a very low on-state voltage drop of less than 20 millivolts at a rated drain-source current of 1.2 Amps. This helps to improve the efficiency of circuits and also reduce the power used for signal transmission.
The HUF76419S3ST is designed to work on higher input voltage and current levels than conventional field effect transistors. The device has a peak thermal resistance of 0.36 degrees Celsius per watt and a maximum voltage of 55 volts. As such, it is suitable for power transmission applications involving higher voltage and current levels.
The working principle of the HUF76419S3ST is based on the principle of depletion and enhancement MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistors). The device consists of four terminals: drain, source, gate, and body. When a voltage is applied across the source and gate terminals, it creates a depletion zone that keeps current from flowing through the drain-source path. The current flows across the gate-body terminals, and this can be adjusted by increasing or decreasing the voltage across the gate-source terminals.
The HUF76419S3ST is a field effect FET designed for surface mount applications such as power management and switching applications. It features both an N-Channel and a P-Channel technology, and is capable of both low on-state resistance and high side-gate threshold voltage. The device also has a low voltage-threshold trigger level, making it ideal for applications that require a highly sensitive control. The working principle of the device is based on depletion and enhancement MOSFET, and it is highly efficient in power transmission applications involving higher input voltage and current levels.
The specific data is subject to PDF, and the above content is for reference
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