HUF75344S3ST Allicdata Electronics
Allicdata Part #:

HUF75344S3ST-ND

Manufacturer Part#:

HUF75344S3ST

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 55V 75A D2PAK
More Detail: N-Channel 55V 75A (Tc) 285W (Tc) Surface Mount D²P...
DataSheet: HUF75344S3ST datasheetHUF75344S3ST Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 285W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 20V
Series: UltraFET™
Rds On (Max) @ Id, Vgs: 8 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The HUF75344S3ST is a single N - channel enhancement - mode vertical DMOS transistor, designed specifically to minimize on - resistance. With it\'s low power consumption and high switching speeds, this device becomes attractive in a variety of applications and can be used in almost any general - purpose power switching and control applications.

The HUF75344S3ST is constructed using N - channel vertical DMOS technology with a protective P - channel MOSFET depletion mode, optically polished silicon gate electrodes, and impressive on - and off - state characteristics. This combination provided by the HUF75344S3ST is ideal for many applications, especially those applications in which efficiency is one of the highest priorities. Efficiency is improved by the low gate charge, low gate-drive power dissipaion, and high switching speeds available.

The HUF75344S3ST is usually used as an on / off control element in circuits that employ source-followers or voltage-controlled resistors as the current-control element. In these circuits, the drain current is controlled by a voltage applied to the gate with respect to the source, and the body diode of the transistor is used to rectify and provide the switch-on programming current. The on-state resistance of the transistor is specified at a specific drain-to-source voltage, making the device suitable for high-efficiency switching.

The HUF75344S3ST is also a suitable device for low-side switching applications. When used as a low-side switch, the drain-source voltage provides the control current to the gate. The device\'s on-state resistance is much lower than a resistive switch and it is easier to program and control than a BJT switch. It also has excellent static and dynamic on-state saturation characteristics.

The HUF75344S3ST has a number of applications including relay and solenoid driving, UPS systems, motor control, DC-DC converters and portable electronic battery-operated device. It is also suitable for low-side switching applications, gate drivers, power gate control, and in many AC/DC and DC/DC converters. The HUF75344S3ST is very efficient in power-management and control circuits due to its low gate-charge and low power consumption.

In summary, the HUF75344S3ST is an ideal choice for many applications due to its low on-resistance and low power consumption. It is suitable for many applications including relay and solenoid driving, UPS systems, motor control, DC-DC converters and portable electronic battery operated device. It\'s low gate charge and low power consumption make it a great choice for power-management and control circuits.

The specific data is subject to PDF, and the above content is for reference

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