HUF76645S3S

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	310W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4400pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	153nC @ 10V
Series:	UltraFET™
Rds On (Max) @ Id, Vgs:	14 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction

The HUF76645S3S is a high-performance gallium arsenide (GaAs) n-channel pulsed field effect transistor (FET) that is ideal for high-power, high-frequency power amplification. It is especially suitable for applications such as high voltage switching and pulse modulation. This device features a high breakdown voltage and excellent linearity, making it well suited for use in power systems where low noise, high efficiency and high current handling is paramount. In this article, we will discuss the applications and working principle of the HUF76645S3S.

Applications

The HUF76645S3S is mainly used in high-power, high-frequency switching applications. It has been designed with a maximum operating voltage of 500V and a maximum operating frequency of 40 GHz. Its superior breakdown voltage, high switching speed, and low on-resistance make it an excellent choice for use in high voltage power systems. It can also be used in high-power switching, pulse width modulation(PWM) applications and high-frequency motor control circuits where efficiency, noise, and current handling capability are important considerations.The HUF76645S3S is also well suited for use as a driver stage in an amplifier application due to its excellent linearity and high output current capability. It is especially well suited for use in telecommunications systems, radar systems, and other high-frequency, high-power signal applications.

Working Principle

The HUF76645S3S is a n-channel, gallium arsenide FET that operates in a voltage control mode. The device has two terminals, the gate and the drain. When a voltage is applied to the gate terminal, it creates an electric field near the surface of the device that modulates the conductivity of the device. This effect, called “field effect”, is what makes field effect transistors so useful in electronic circuits.When a voltage is applied to the gate of the device, electrons from the adjacent N-doped region are attracted to the “gate region” of the device, which increases the conductivity of the device. This creates a voltage drop across the drain-source terminals, resulting in current flow through the device. By adjusting the voltage on the gate terminal, the amount of current that can flow through the device can be controlled.

Conclusion

The HUF76645S3S is a n-channel gallium arsenide FET which is ideal for high-power, high-frequency switching applications. Its superior breakdown voltage, low on- resistance, and high switching speed make it well suited for use in high-voltage power systems. It also offers excellent linearity and high output current capability, making it suitable for use in amplifiers and other high-frequency signal applications. Its working principle is based on field effect, where the current flow through the device is controlled by a voltage applied to its gate terminal.

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