| Allicdata Part #: | HUF75307D3ST-ND |
| Manufacturer Part#: |
HUF75307D3ST |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 55V 15A DPAK |
| More Detail: | N-Channel 55V 15A (Tc) 45W (Tc) Surface Mount TO-2... |
| DataSheet: |  HUF75307D3ST Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252AA |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 45W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 20V |
| Series: | UltraFET™ |
| Rds On (Max) @ Id, Vgs: | 90 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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HUF75307D3ST Application Field and Working Principle
HUF75307D3ST is a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor). It is a type of transistor that can be used to switch on and off large currents while using very little power. It is used in applications where high switching speed and high current are needed, such as motor control and power conversion.
The HUF75307D3ST MOSFET has a drain-source maximum voltage of 30V, a drain current of 19A, and a power dissipation of 350W. It features a very low drain-source on-resistance of 0.0063 Ω, making it well-suited for low impedance switching applications. Additionally, the HUF75307D3ST MOSFET has a fast switching speed, allowing for it to be used in applications that require rapid switching.
The HUF75307D3ST MOSFET has several uses and applications. It is used in almost all electronic components that require high-frequency switching and high-voltage current handling. It is also used in motor control, power conversion, and voltage regulation applications. Additionally, it is used in battery charging and discharging, specific voltage applications, and as a digital amplifier.
The working principle of the HUF75307D3ST MOSFET is based on the Electrostatic Field Effect Principle. This is a phenomenon that occurs when a voltage is applied to the gate of the transistor, which sets up an electrostatic field that attracts electrons and causes a current in the channel between the drain and source. This current then determines the resistance between the drain and source, allowing for precise current control.
The HUF75307D3ST MOSFET is a versatile and reliable MOSFET for use in many applications. Its fast switching speed, low on-resistance, and high current capability make it perfect for applications that require rapid switching, low power loss, and high current ratings. Additionally, the electrostatic field effect principle employed in the HUF75307D3ST MOSFET allows for precise control over current flow.
The specific data is subject to PDF, and the above content is for reference
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