Allicdata Part #: | HUF75309D3S-ND |
Manufacturer Part#: |
HUF75309D3S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 19A DPAK |
More Detail: | N-Channel 55V 19A (Tc) 55W (Tc) Surface Mount D-Pa... |
DataSheet: | HUF75309D3S Datasheet/PDF |
Quantity: | 1000 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 55W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The HUF75309D3S is a single high-side MOSFET driver integrated circuit (IC). This type of IC is capable of controlling the current that passes through the gate of a MOSFET. The HUF75309D3S has excellent low on-state and low switching losses, making it an ideal choice for voltage regulators, DC motor control and renewable energy systems, among other applications.
The HUF75309D3S is designed to provide a simple, efficient way to control a MOSFET, or metal-oxide-semiconductor field-effect transistor. A MOSFET is a type of transistor that uses a variety of electric fields to control the flow of current through the circuit. By controlling the movement of electrons, the behavior of an entire circuit can be changed.
The HUF75309D3S has a maximum operating temperature of +150 ˚C, making it optimal for many applications. It is rated for a maximum output current of 6A and a maximum voltage of 42V. It operates from a single power supply and is protected from internal and external overvoltage conditions.
The main feature of the HUF75309D3S is its integrated high-side driver, which is able to switch resistive, capacitive, inductive and diode loads quickly and efficiently. It has a built-in error amplifier that senses the current flowing through the MOSFET and adjusts the voltage applied to the MOSFET gate. This enables precise and reliable control of the MOSFET even when the load is rapidly changing or if the supply voltage fluctuates.
The HUF75309D3S also features an integrated sleep mode, which helps conserve power when the load is idle. When the HUF75309D3S is in sleep mode, the MOSFET gate is held in a low-current state, preventing any current from flowing through the circuit. When the load is activated, the high side driver will automatically wake up and switch the MOSFET to its fully-on state.
The HUF75309D3S is an ideal IC for applications where high switching speeds and reliable control of the MOSFET is needed. It is used in high current DC motors, DC power supplies, solar power, audio amplifiers and other applications where precise and reliable control is required. It is also suitable for use in extreme temperature conditions, given its wide operating temperature range.
In summary, the HUF75309D3S is an ideal choice for applications that require precise and efficient control of a MOSFET. It features an integrated high-side driver that can rapidly switch loads, and a built-in error amplifier that senses the current flowing through the MOSFET. The HUF75309D3S is rated for a maximum output current of 6A and maximum voltage of 42V, and its wide operating temperature range makes it suitable for use in extreme temperature conditions.
The specific data is subject to PDF, and the above content is for reference
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