Allicdata Part #: | HUF76619D3S-ND |
Manufacturer Part#: |
HUF76619D3S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 18A DPAK |
More Detail: | N-Channel 100V 18A (Tc) 75W (Tc) Surface Mount TO-... |
DataSheet: | HUF76619D3S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 85 mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 767pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 75W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252AA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HUF76619D3S is a kind of MOSFETS, which stands for Metal Oxide Semiconductor Field Effect Transistor. It is a single component usually used as a surface mount device (SMD). The development of MOSFET has been greatly improved in the recent years, which has become one of the core components of current electronic products. In addition, HUF76619D3S provides a variety of advantages, making it a preferred component for many applications.
HUF76619D3S can be used for various purposes and the most common applications include DC-DC converter, server power supply and solar energy conversion. Generally speaking, HUF76619D3S is ideal for circuit with low voltage, low on-resistance and high-gain output. Moreover, it can be used to build voltage-controlled switching devices, allowing for better control of the circuits, as well as for energy efficiency.
The working principle of HUF76619D3S is based on the conventional metal-oxide semiconductor field-effect transistor (MOSFET) operation. Basically, a subsystem comprising a gate electrode and a gate oxide layer is applied on the surface of the integrated circuit. When the input gate voltage is raised above a certain threshold voltage, a conductive medium is created between the gate oxide layer and the semiconductor substrate, and electrons flow through this channel. This implies that the current can be controlled by the gate voltage.
HUF76619D3S is also known for its robust design, featuring a string of process advancements which help it in achieving remarkably low on-resistance. Moreover, it also offers much better thermal performance than other alternatives. Its output power is tremendous, and its noise immunity is strong when compared to other devices.
HUF76619D3S can also be used in combination with other components to achieve maximum efficiency. For instance, it can be used with diode switches and inductors for achieving a smooth, linear output power. Furthermore, it can be used in combination with other passive components to achieve an optimal switching circuit. This makes it ideal for build Variable Frequency Drive (VFD) as well as for other high efficiency applications.
In conclusion, HUF76619D3S is an effective MOSFET, equipped with efficient operation and impressive performance. The integration of high quality process advancement helps it in achieving low on-resistance values, high current carrying capacity and used to build robust and efficient switching circuits. As the technology continues to evolve, MOSFET is expected to become even more reliable, power efficient and cost-effective. Therefore, it is expected to remain a key component in modern circuit designs.
The specific data is subject to PDF, and the above content is for reference
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