Allicdata Part #: | HUF76423D3S-ND |
Manufacturer Part#: |
HUF76423D3S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 20A DPAK |
More Detail: | N-Channel 60V 20A (Tc) 85W (Tc) Surface Mount TO-2... |
DataSheet: | HUF76423D3S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 32 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 1060pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 85W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252AA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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HUF76423D3S is a single N-Channel MOSFET designed and produced by Toshiba. This transistor exhibits outstanding characteristics, such as low on resistance, fast switching speeds, and small package size. It is also capable of handling high frequencies when used in switching applications. The device is perfect for high-current, high-speed MOSFET applications, and can be used in a wide variety of electronic circuits.
An N-channel MOSFET is a type of transistor built using an insulated gate construction. It is made up of two terminals, the drain, and the source. Voltage is applied to the gate, which then creates an electric field. This electric field then attracts mobile electrons, which move from the source towards the drain. As more voltage is applied to the gate, more electrons move, creating a current. N-channel MOSFETs are ideal for switching applications, as their on resistance is usually low and switching speeds are usually high.
The HUF76423D3S has a drain-source voltage of 200V, an on-resistance of 1.25 ohms, a gate-source voltage of ±20V, and a drain current of 2A. It is a surface mount device, featuring a small package size of 0.6mm x 0.3mm. This type of transistor is well-suited for high-current, high-speed switching applications, and is often used as a voltage regulated switch or as an ultra-fast switch. It also has excellent power efficiency and offers superior protection against surge current and electrostatic discharge (ESD).
The HUF76423D3S is highly reliable and is available in a wide variety of sizes and packages. The device’s low on-resistance, fast switching speeds, and small package size make it the perfect choice for applications such as power management, telecommunications, computing, and automotive. The device is also highly reliable and can operate in harsh environments, making it suitable for even the most demanding applications.
In conclusion, the HUF76423D3S is a single N-channel MOSFET designed and produced by Toshiba. It is capable of handling high frequencies, has low on resistance, fast switching speeds and a small package size. It is ideal for high-current and high-speed MOSFET applications, and is often used as a voltage regulated switch or as an ultra-fast switch. It has excellent power efficiency and offers superior protection against surge current and ESD. Additionally, the device is highly reliable, making it suitable for even the most demanding applications.
The specific data is subject to PDF, and the above content is for reference
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