HUF76419P3 Allicdata Electronics
Allicdata Part #:

HUF76419P3-ND

Manufacturer Part#:

HUF76419P3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 29A TO-220AB
More Detail: N-Channel 60V 29A (Tc) 75W (Tc) Through Hole TO-22...
DataSheet: HUF76419P3 datasheetHUF76419P3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
FET Feature: --
Power Dissipation (Max): 75W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Series: UltraFET™
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 35 mOhm @ 29A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Description

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The HUF76419P3 is a high-performance, low-cost field effect transistor (FET). It is designed for applications in low- to medium-power switching and linear amplifier circuits. The HUF76419P3 is a N-channel depletion-mode FET, with a drain-source voltage rating of up to 55V, and a maximum current rating of 14A.

Basic Working Principle

The HUF76419P3 is a type of field effect transistor, which also includes MOSFETs and JFETs. Field effect transistors work on the principle of controlling current flow by using an electric field to modify the conductivity of a channel between the source and drain. The field effect transistor is composed of three terminals: the source, gate, and drain. The current through the drain is determined by the amount of current flowing through the gate. The gate voltage changes the conductivity of the channel, which in turn affects the current flow through the device.

Application Fields

The HUF76419P3 is an ideal choice for low to medium-power switching and linear amplifier circuits. Its high voltage rating and current capability make it well suited for use in motor control, switch-mode power supplies, battery chargers, and DC-to-DC converters. It can also be used in applications such as audio amplifiers, voltage referenced circuits, and AC power supplies. The device is also well suited for use in harsh industrial environments due to its wide temperature range (-55°C to +150°C).

Features

The HUF76419P3 has many features that make it an attractive choice for a variety of applications. It has an excellent drain-source current transfer ratio of 1500V/V. It also features a low gate-source capacitance, which provides for fast switching speeds. The device has a low drain-source on resistance (RDSon), which results in a low conduction loss. The high-voltage rating and current capabilities allow for greater power handling capabilities. And with its wide operating temperature range (-55°C to +150°C) it can be used in harsh industrial environments.

Conclusion

The HUF76419P3 is a low-cost, high-performance field effect transistor (FET). It is designed for use in low to medium-power switching and linear amplifier circuits, and is well suited for use in harsh industrial environments. Its excellent current transfer ratio and low gate-source capacitance provide fast switching speeds. With its wide voltage rating and current capabilities, the HUF76419P3 is an ideal choice for applications such as motor control, switch-mode power supplies, battery chargers, and DC-to-DC converters.

The specific data is subject to PDF, and the above content is for reference

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