HUF75617D3ST

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HUF75617D3ST is a single-pole, low-capacitance P-channel enhancement-mode field-effect transistor (FET) used in a variety of applications. It offers superior reliability and performance in a wide range of voltage and frequency operations. This product is designed for use in audio amplifiers and switching applications. The HUF75617D3ST has gained a reputation as a reliable and cost-effective FET.

The HUF75617D3ST is designed to operate with very low gate-to-source (G-S) voltage. The operating voltage range for the HUF75617D3ST is from 0.8V to 9.2V. The maximum gate-to-source (G-S) capacitance of the HUF75617D3ST is 17pF at 0.6V. The maximum gate-to-source (G-S) capacitance of the HUF75617D3ST increases to 17.5pF at 1.2V.

The HUF75617D3ST features a structure consisting of an N-channel junction FET, with an integral P-channel junction FET. The N-channel FET is connected to a common source terminal while the P-channel FET is connected to a common drain terminal. The source and drain terminals are connected directly to the gate connection at the center. This structure creates an isolated, symmetrical “FET pair” with low parasitic capacitance and very low gate charge.

The FET pairs of the HUF75617D3ST are connected in parallel to provide greater current switching capability. This parallel connection also reduces the input capacitance of the device, allowing faster switching and better noise performance. The FET pair structure of the HUF75617D3ST provides superior efficiency, high reliability, and very stable voltage characteristics.

The HUF75617D3ST is designed to operate in a variety of applications, including power switching, audio amplifiers, and other consumer electronic products. The high on-current (I_D) and low on-noise characteristics make the HUF75617D3ST an ideal choice for audio and consumer electronics applications. This device is also well suited for high-efficiency, low noise power switching applications, such as off-line converters and computer switching applications.

The HUF75617D3ST is a “Depletion Mode” FET, meaning that it turns on when the gate voltage is zero, and turns off when the gate is slightly negative. The on-resistance of the HUF75617D3ST is typically 7 ohms, and the on-current is typically 180 mA. The typical gate charge is 8nC. The turn-on and turn-off times of the HUF75617D3ST are typically in the nanoseconds range.

The HUF75617D3ST is a high-performing, reliable, and cost-effective FET. The device is designed to operate under a wide range of voltages and frequencies, and provides superior on-current and low on-noise characteristics. The FET pair structure of the HUF75617D3ST provides superior efficiency, high reliability, and very stable voltage characteristics. The FET pairs of the HUF75617D3ST are connected in parallel to provide greater current switching capability and reduce the input capacitance of the device. The HUF75617D3ST is a well-suited device for audio amplifiers and power switching applications.

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