HUF76009D3ST

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

HUF76009D3ST is a N-channel Power MOSFET produced by OTPIK Semiconductor, suitable for use in high to medium voltage DC applications such as power switches and automotive circuits. Compared with the low-side switching devices, it has a lower on-resistance and better thermal characteristics but requires a higher gate voltage to turn it on. The HUF76009D3ST is a two-thirds enhancement mode MOSFET, meaning that the gate-to-source voltage must exceed the threshold voltage before the MOSFET will conduct current. This type of MOSFET is great for applications requiring reverse-blocking capability.

Working Principle

At low gate-to-source voltages, the HUF76009D3ST gate region is electrically isolated from the source and the drain by an oxide layer, preventing current from flowing from the source to the drain. As the gate-to-source voltage increases and exceeds the threshold voltage, the electrons become more mobile and are able to cross the oxide layer, creating a strong electric field between the gate and the drain which actively reduces the resistance between the source and drain. This lowering of the resistance is proportional to the gate-to-source voltage, hence the name “enhancement mode transistor”.

Once the resistance between the source and drain is low enough, current is able to flow freely from the source to the drain, turning the MOSFET on. The HUF76009D3ST has an effective on-resistance of 0.0073Ω and can support a drain-source voltage of up to 60V.

Applications

With its low on-resistance and reverse-blocking capability, the HUF76009D3ST is suitable for applications in a number of different industries. It can be used in automobile circuits, automotive applications, power switch applications, switching power supplies, and in low-voltage/low-power DC applications.

It can also be used as a power supply switch in many commercial and industrial products such as 3D printers, X-ray machines, electric vehicles, air conditioners, and refrigerators. Additionally, due to its low on-resistance, the HUF76009D3ST is well-suited for inverter applications, for delivering power to motor drives, and for controlling the power of light sources.

Advantages

The HUF76009D3ST offers several key benefits, such as its low on-resistance and its ability to withstand high drain-source voltages. Additionally, with its two-thirds enhancement mode MOSFET construction, it offers a good balance between efficiency and cost, making it an attractive option for many applications.

The HUF76009D3ST also has an excellent thermal and reverse temperature coefficient, meaning that it can be used in high-temperature applications without fear of damage or loss of performance. Furthermore, it has an ultra-low gate charge, making it ideal for pulsed load applications.

Conclusion

The HUF76009D3ST is a low-side N-channel MOSFET produced by OTPIK Semiconductor that is designed for high to medium voltage DC applications. It has a very low on-resistance, a reverse temperature coefficient, and a high drain-source voltage rating, making it suitable for a wide range of applications. Additionally, its two-thirds enhancement mode MOSFET construction offers good efficiency and cost savings. It is a great choice for many commercial and industrial power applications.

The specific data is subject to PDF, and the above content is for reference