Allicdata Part #: | HUF75329P3-ND |
Manufacturer Part#: |
HUF75329P3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 49A TO-220AB |
More Detail: | N-Channel 55V 49A (Tc) 128W (Tc) Through Hole TO-2... |
DataSheet: | HUF75329P3 Datasheet/PDF |
Quantity: | 1000 |
Package / Case: | TO-220-3 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 49A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 49A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1060pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 128W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
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HUF75329P3 Application Field and Working Principle
The HUF75329P3 is a type of Field Effect Transistor (FET), more specifically a type of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). This particular MOSFET is of the single or discrete type, meaning it contains only one active element, or die. These types of transistors are often used in analog and high frequency applications, such as radio reception and amplification.
MOSFET transistors operate by using a gate terminal which, when electrically charged, controls the current flow. This gate voltage is used to turn on or off the current flow, allowing for a more precise control of current flow than with other types of transistors. The HUF75329P3 is specifically designed for switching and amplifying applications; it is rated for 125Watts of output power and can switch up to 30V. It also has a low on-resistance value of 0.362 Ohms, meaning it can carry more current with less voltage drop than many other MOSFETs.
When compared to other types of transistors, MOSFETs have several potential advantages. For one, they are smaller and more efficient than some other types, meaning that they can pack more transistors into a given area while consuming less power. They also have a relatively low input capacitance, meaning that they can respond quickly to voltage changes, making them well suited for high-frequency and switch-mode applications.
Overall, the HUF75329P3 is a single, metal-oxide-semiconductor field-effect transistor, or MOSFET, and is suitable for applications such as radio reception and amplification, switching, and amplifying. It is rated for a maximum power output of 125W and can switch up to 30V, making it an ideal choice for many applications. The low on-resistance value and the small size, low input capacitance, and good resistance to thermal overload make this transistor the preferred choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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