Allicdata Part #: | HUF75321D3S-ND |
Manufacturer Part#: |
HUF75321D3S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 20A DPAK |
More Detail: | N-Channel 55V 20A (Tc) 93W (Tc) Surface Mount TO-2... |
DataSheet: | HUF75321D3S Datasheet/PDF |
Quantity: | 1000 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 36 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 680pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 93W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252AA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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HUF75321D3S is a N- Channel MOSFET with a maximum drain source voltage of 75V and a drain current of 1.6A. It is designed and manufactured by STMicroelectronics and offers excellent RDS(on), low gate charge and fast switching. HUF75321D3S offers an enhanced level of features, such as avalanche energy and a robust body diode.
Application Fields
HUF75321D3S is mostly used in motor controls, power management, switching, and audio applications. It is the ideal switch to control the DC motor applications. This MOSFET is also suitable for applications such as power converters, power supplies and many other switching applications.
Working Principle
HUF75321D3S consists of several layers of different types of materials, including semiconductor materials, such as Gallium Arsenide (GaAs) materials and Silicon (Si). At the heart of the HUF75321D3S is a N-Channel MOSFET, which is an inversion-mode field-effect transistor. This provides an efficient, low-power switching capability, allowing large current and voltage swings with very low voltage and current losses.
The gat electrode is electrically insulated from the substrate and other components of the HUF75321D3S. The gate is used to control the drain current through the channel, and this control is based on the electric potential applied to the gate. The electric potential applied to the gate determines the resistance of a conducting channel between the source and the drain. This resistance is then used to control the current in the channel, and it is this current which causes the application to work very efficiently.
The N-Channel MOSFET used in the HUF75321D3S offers a good electrostatic discharge (ESD) protection and is also capable of sustaining higher power pulses. This makes it an excellent choice for switching purposes. It is also suitable for use in high frequency applications, such as Motor Driver Applications, as it offers a very fast switching time, thus allowing for efficient power control.
Conclusion
The HUF75321D3S is a power MOSFET with a wide range of applications and offers excellent RDS(on), low gate charge, fast switching and a robust body diode. It is an ideal switch for the DC motor applications and provides efficient power control in high frequency applications. This MOSFET is also suitable for use in power converters and power supplies.
The specific data is subject to PDF, and the above content is for reference
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