HUF75309T3ST

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HUF75309T3ST is a type of field effect transistor (FET) used as a semiconductor device. It belongs to the single series of Mosfet type FETs.

FETs are electronic devices made from a number of diffusible impurities or doped semiconductor material. The number of impurities or dopants determines the type of the FET: whether it is N-channel, P-channel, or its different varieties. This type of FET comprises of four layers of doped semiconductor material – the gate, source, drain and body. It operates like a switch and is used to either allow or restrict current flow by varying the voltage applied to the gate.

HUF75309T3ST is an N-channel FET with a maximum drain current of 78A, a max drain-source voltage of 59V, and a RDS(ON) of 7.7mohm at 25C temperature and 70 V/V Gate-source voltage.

The source of the HUF75309T3ST FET is the negative terminal and the gate is the control terminal. The voltage applied to the gate controls the current flow between the drain and source. When the gate terminal of HUF75309T3ST FET is grounded, the FET is in the OFF-state, allowing no current to flow from drain to source. When a voltage is applied to the gate, the current flow from drain to source is switched on.

The key feature of the HUF75309T3ST FET is that it is a low on-resistance Mosfet, with an RDS (ON) of 7.7mohm for a gate-source voltage of 70V/V. It is also designed to operate at low gate-source voltages and with a package that is suitable for high-current applications.

HUF75309T3ST FETs are suitable for power management applications, power switching converters, DC-DC converters and battery powered equipment. It can be used in automotive, consumer, industrial and communication equipment.

HUF75309T3ST is an indispensable component in many electronic and electrical devices due to its superior low on-resistance and high current handling capacity, as well as its flexibility to be used in a variety of applications.

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