Allicdata Part #: | HUF76419D3ST-ND |
Manufacturer Part#: |
HUF76419D3ST |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 20A DPAK |
More Detail: | N-Channel 60V 20A (Tc) 75W (Tc) Surface Mount TO-2... |
DataSheet: | HUF76419D3ST Datasheet/PDF |
Quantity: | 1000 |
FET Feature: | -- |
Power Dissipation (Max): | 75W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252AA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Series: | UltraFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 37 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 27.5nC @ 10V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 25V |
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HUF76419D3ST is a high-performance N-channel depletion-mode MOSFET. It is designed to be used with a wide range of automotive, industrial and communications applications. The MOSFET is suitable for numerous signal control and low-voltage switching applications. It has a low on-resistance, which allows it to be used in situations where a tiny signal needs to be switched between two power sources. It also has a low input capacitance, making it ideal for high-frequency applications.
The HUF76419D3ST’s application field includes, but is not limited to, applications such as DC motor control, switching power supplies, LED lighting, LED displays, LED drivers, DC-DC converters, audioblocks, and other low voltage switching applications. This MOSFET can also be used in HVAC systems for controlling fans, compressors and other large AC motors.
The working principal of HUF76419D3ST is based on that of the MOSFET device. It utilizes an N-channel MOSFET as the active element. The device behaves like a variable resistor, in that the gate voltage directly controls the drain-source current. This allows the device to be used to control the power flow between two power sources. When the voltage across the gate is high enough, the device will enter a state of conduction, allowing current to flow between the source and the drain. A high gate voltage increases the current, while a low gate voltage decreases the current.
The HUF76419D3ST has a maximum drain-source breakdown voltage of 200 V, a gate threshold voltage of 1.6 V, and a drain-source on resistance of only 20 mΩ at Vgs = 10 V. It is also optimized to provide a high gain figure of merit (FOM) = 76. The high FOM indicates that this MOSFET can handle severe load conditions. This device also has a very low gate-drain capacitance, which is useful for high-frequency applications. It is also rated for low drain-source leakage current, low gate input capacitance, and low gate charge, making it suitable for very efficient signal-controlled applications.
In conclusion, the HUF76419D3ST is a high-performance N-channel depletion-mode MOSFET designed for use in automotive, industrial, and communications applications. It has low on-resistance, which allows it to be used in situations where a tiny signal needs to be switched between two power sources, and has a low input capacitance, making it ideal for high-frequency applications. It has several application fields, such as DC motor control, LED lighting, LED drivers, and HVAC systems. Its working principle is based on the MOSFET, and it has a low gate-drain capacitance which is useful for high-frequency applications. This makes the HUF76419D3ST an ideal choice for low-voltage switching applications.
The specific data is subject to PDF, and the above content is for reference
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