Allicdata Part #: | HUF75309P3-ND |
Manufacturer Part#: |
HUF75309P3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 19A TO-220AB |
More Detail: | N-Channel 55V 19A (Tc) 55W (Tc) Through Hole TO-22... |
DataSheet: | HUF75309P3 Datasheet/PDF |
Quantity: | 1000 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 55W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HUF75309P3 is a type of FETs or field effect transistor, a kind of single MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that works by a unique principle known as the “field effect.” A FET has three components: the gate, the source, and the drain. Depending on the situation, the drain and the source may be reversed to give the desired result. FETs are used to protect circuits and control currents and signals, and come in both depletion mode and enhancement mode. The HUF75309P3 is an “enhancement mode” FET which works the same way as a depletion mode, but with a much higher threshold voltage.
The HUF75309P3’s working principle involves “polarization” of the channel. This is done by applying a voltage to the gate, which in turn affects the electrostatic field of the channel. The gate functions as a controlling terminal, and when a positive voltage is applied, it polarizes the channel and creates a conductive path for current to flow. When the voltage is removed, the current can be stopped or reversed.
This FET is widely used in many applications, including in power supply regulation, inverters, switching power supplies, relays, motor controls, and motor drive amplifiers. It can be used to provide effective protection and isolation from voltage surges, as well as preventing short circuit damage to equipment. It is also used in automotive electrical circuits to provide adjustable control and protection. Since the HUF75309P3 has a higher threshold voltage, it is less prone to false triggering when used with controllers and other devices.
The HUF75309P3 also has several advantages. It has a high input impedance, which makes it ideal for signal control and frequency regulation applications. It also has very low on-resistance, which ensures low switching losses and fast switching speed. In addition, it is also able to protect against overloads and short circuits when used in high voltage applications. Lastly, it is one of the most cost-effective MOSFETs on the market today.
Overall, the HUF75309P3 is a powerful and cost-effective FET, with a wide range of applications that can benefit from its features. With its high input impedance, low on-resistance, and ability to prevent overloads and short circuits, it provides reliable and efficient protection and control of various circuits and systems.
The specific data is subject to PDF, and the above content is for reference
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