Allicdata Part #: | HUF75617D3-ND |
Manufacturer Part#: |
HUF75617D3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 16A TO-251AA |
More Detail: | N-Channel 100V 16A (Tc) 64W (Tc) Through Hole TO-2... |
DataSheet: | HUF75617D3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 570pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 64W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-251AA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The HUF75617D3 is a single N-channel MOSFET transistor used for applications such as electronic power switches, pulse mores, and power amplifiers. It offers superior thermal and electrical performance, low gate threshold voltage, and low on-resistance. This makes it a suitable choice for applications where power efficiency is important.
The HUF75617D3 is an enhancement type field effect transistor (FET). It has a single N-channel MOSFET structure and is constructed from silicon by a diffused process. The transistor gate is connected to a voltage source, which allows it to be turned on and off, along with the output current. When the transistor is turned on, it allows current to flow through it, and when it is turned off, it prevents the current from flowing.
The working principle of the HUF75617D3 is based on the MOSFET structure. The transistor has three main terminals known as the source, gate and drain, and when a positive voltage is applied to the gate of the transistor, it allows current to flow through the source and drain terminals. The amount of current that can flow through the transistor can be controlled by adjusting the voltage applied to the gate. The on-resistance of the HUF75617D3 is typically very low, so it can easily handle high power rating applications, such as DC-DC converter circuits and motor controllers.
The HUF75617D3 can be used in a wide range of applications, including motor control circuits, DC-DC converters, power switches and power amplifiers. Its low on-resistance and high voltage rating make it suitable for high-power applications, while its low gate threshold allows it to be used in circuits that require precise switching and low-noise operation. In addition, its high current capacity makes it suitable for high current applications, such as LED drivers.
The HUF75617D3 is a versatile and reliable field effect transistor, and its many features make it an attractive choice for a wide range of applications in the current market. Its renowned high power efficiency, low gate threshold, low on-resistance, and high-voltage capabilities make it well suited for use in high-power switching and pulsing applications.
The specific data is subject to PDF, and the above content is for reference
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