Allicdata Part #: | HUF76013P3-ND |
Manufacturer Part#: |
HUF76013P3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 20V 20A TO-220AB |
More Detail: | N-Channel 20V 20A (Tc) 50W (Tc) Through Hole TO-22... |
DataSheet: | HUF76013P3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 624pF @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | 50W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
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HUF76013P3 active components are one of the most widely adopted types of through-hole FETs used today. It typically operates as a voltage-controlled device with a low power dissipation rate, allowing it to be an effective electricity controller in many kinds of electronic applications. This article will discuss its application fields, working principles, and main features.
Application Fields
HUF76013P3 FETs are primarily used in DC/DC conversion applications, high voltage switching, overvoltage protection, motor control, and sound amplification.
- DC/DC conversion: HUF76013P3 can handle a high amount of current with its low on-resistance, making it suitable for power supplies, audio amplifiers, and other devices which requires an efficient DC/DC conversion.
- High voltage switching: HUF76013P3 is often used as a transistor for switching high voltage loads on and off. Its low on-resistance makes it an ideal choice for applications where accuracy and reliability are key.
- Overvoltage protection: HUF76013P3 provides built-in ESD protection, which limits the amount of current that can be drawn from the device. This feature makes it ideal for providing high voltage overprotection.
- Motor control: HUF76013P3 is often used as an amplifier in motor control circuits. Its low on-resistance makes it suitable for controlling large loads with high accuracy.
- Sound Amplification: HUF76013P3 provides high power-efficiency, enabling it to be used in a variety of audio amplifiers and sound systems.
Working Principle
HUF76013P3 FETs work on the principle of voltage-controlled current flow. A voltage drop is applied between its two pins, the source and the drain. The amount of current that is allowed to flow is determined by the magnitude of the voltage.
When the gate voltage is sufficiently high, a depleted region is created between the source and the drain terminals, preventing current from flowing. When the gate voltage is reduced, electrons start to fill the depleted region, enabling current to flow from the source to the drain.
The magnitude of the current that is allowed to flow is determined by the gate voltage, which can be adjusted to achieve the desired level of current.
Main Features
HUF76013P3 FETs offer several features that make them an effective active component in electronic applications. These features include:
- Low on-resistance: The device offers a low on-resistance, which allows it to efficiently control a large amount of current.
- High voltage rating: HUF76013P3 is designed to handle a wide range of voltages, making it suitable for applications that require high voltage switching or protection.
- High temperature tolerance: The device has a high temperature tolerance, making it suitable for use in harsh environments.
- Built-in ESD protection: The device has built-in ESD protection, which prevents surges and other high voltage disruptions from damaging the device.
- High power-efficiency: HUF76013P3 offers high power-efficiency, enabling it to be used in a variety of audio amplifiers and sound systems.
HUF76013P3 active components are a widely used type of through-hole FETs which offer a wide range of features, making them suitable for a variety of electronic applications. They offer low on-resistance, high voltage rating, ESD protection, and high power-efficiency, making them a reliable and cost effective choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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