| Allicdata Part #: | HUF76407D3-ND |
| Manufacturer Part#: |
HUF76407D3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 60V 12A IPAK |
| More Detail: | N-Channel 60V 12A (Tc) 38W (Tc) Through Hole TO-25... |
| DataSheet: |  HUF76407D3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | UltraFET™ |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 92 mOhm @ 13A, 10V |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 11.3nC @ 10V |
| Vgs (Max): | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 38W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-251AA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The HUF76407D3 is an N-channel TrenchMOS field-effect transistor (FET). It features low on-state resistance, logic-level FET gate drive and a small, thermally enhanced surface-mount package. The device provides improved power efficiency and reduced EMI, making it ideal for switching applications in consumer, industrial and automotive applications.
The HUF76407D3 has a single gate FET structure comprising a single N-channel FET and a Schottky diode. The Schottky diode is connected in parallel to the gate and source of the FET and is designed to prevent burn-out of the FET in case of an excessive voltage. The low on-state resistance makes the HUF76407D3 an excellent choice for high-frequency switching applications. Additionally, the logic-level gate drive allows it to be driven from a 3.3V logic signal, eliminating the need for a gate drive transformer.
The HUF76407D3 features a thermally enhanced surface-mount package to improve heat dissipation. The package is composed of a leadframe and multiple power pins. The leadframe creates a gap between the top of the package and the power pins that provides a path for air to flow away from the device, increasing its cooling efficiency. The multiple power pins also spread out the heat generated by the device, improving its thermal performance.
The HUF76407D3 is suitable for many applications, including motor control, high-frequency power conversion, load switching and current sensing. As the device is logic-level compatible and has a low on-state resistance, it is also suitable for use in high-frequency switching applications in consumer, industrial and automotive applications.
In conclusion, the HUF76407D3 is an excellent choice for high-frequency switching applications. It features a single gate FET structure with a low on-state resistance, logic-level gate drive and a thermally enhanced surface-mount package for improved heat dissipation. The device is suitable for many applications, including motor control, high-frequency power conversion, load switching and current sensing.
The specific data is subject to PDF, and the above content is for reference
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