HUF75321D3ST Discrete Semiconductor Products |
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Allicdata Part #: | HUF75321D3STTR-ND |
Manufacturer Part#: |
HUF75321D3ST |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 20A DPAK |
More Detail: | N-Channel 55V 20A (Tc) 93W (Tc) Surface Mount TO-2... |
DataSheet: | HUF75321D3ST Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 93W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 680pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 20V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 36 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HUF75321D3ST is a type of Field Effect Transistor (FET), which is a type of transistor that uses electric fields for the purpose of controlling current/voltage/signal flow in other electrical components and circuits. This particular FET is specially used in applications that demand efficient distortionless and fast switching speed, such as automotive electronics. It is usually used within the power switching stage of automobiles, where it helps the vehicle’s electronic systems to switch on and off without any undesired noise or distortion.
The working principle of HUF75321D3ST is based on the behavior of majority carriers. Whenever a source-gate voltage is applied to it, majority carriers will start to flow in a channel between its source and drain, thus creating a conducting path where current can flow. This transistors is usually biased in the enhancement mode, which means that no current will be conducted through it (i.e. it is OFF) until an external voltage is applied. This is why it is often used in switching applications, because it can quickly switch from an OFF to an ON state.
Furthermore, the HUF75321D3ST receives its voltage supply from a drive circuit, which helps to control the transistor’s feedback, in order to properly amplify the signal. The signal is then sent to the load, and depending on the type of transistor, the signal can either be amplified or switched. In this case, the signal is switched in order for the load to get either a high or low signal. This type of transistor can also be used to amplify, amplify and switch, or just switch the signal.
Furthermore, the HUF75321D3ST is usually capable of withstanding quite severe conditions and it can usually operate with a junction temperature of up to 155 °C without any damage or anomalies. This makes it a reliable and robust device, especially when used within automotive applications, as it can perform without any worries. It also has a high surge and ESD capability, meaning that it can withstand high voltage shocks and spiked currents, thus allowing it to provide a higher robustness and safety.
In conclusion, the HUF75321D3ST is a type of FET that is specially used for applications that require fast and efficient switching speeds. It has a high surge capability and can withstand harsh conditions, making it very reliable and suitable for automotive applications. Furthermore, it has the ability to amplify, amplify and switch, or just switch signals, depending on the type of transistor chosen. This makes it extremely versatile, as it can be used in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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