HUF75329D3ST Allicdata Electronics

HUF75329D3ST Discrete Semiconductor Products

Allicdata Part #:

HUF75329D3STFSTR-ND

Manufacturer Part#:

HUF75329D3ST

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 55V 20A DPAK
More Detail: N-Channel 55V 20A (Tc) 128W (Tc) Surface Mount TO-...
DataSheet: HUF75329D3ST datasheetHUF75329D3ST Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 128W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 20V
Series: UltraFET™
Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The HUF75329D3ST is a popular field effect transistor (FET) used for a variety of applications. This single-channel FET is notable for its high current, low capacitance, and small footprint. It is suited for low-noise operations and is often used in communications systems, power supplies, and other circuits requiring high-speed switching. In this article, we will discuss the application field and working principle of the HUF75329D3ST.

HUF75329D3ST Features

The HUF75329D3ST offers a variety of features that make it ideal for many applications. It has a low on-state drain-to-source resistance (RDS(on)) of 0.1Ω, a high switching current of 6A and a breakdown voltage of 68V. It is also equipped with a fast switching speed, making it suitable for high-speed switching operations. In addition, it has a small footprint of 6mmx4mm and a low gate-charge of 7nC.

HUF75329D3ST Applications

The HUF75329D3ST is well-suited for use in communication systems, power supplies, and circuits requiring high-speed switching. It is especially useful in switching circuits, where its low RDS(on) and fast switching speed makes it ideal for transmitting and receiving signals. It is also commonly used in power supplies and other circuits requiring high reliability and low-noise operations.

HUF75329D3ST Working Principle

The HUF75329D3ST is an insulated-gate field effect transistor (IGFET) with a P-channel MOSFET structure. It works by trapping a charge of electrons in its P-type channel and by modulating the electric field at its gate. When a voltage is applied at the gate, the field causes the electrons to move and the P-type channel is charged. This charge creates a conductive path between drain and source. By modulating the voltage at the gate, it is possible to control the conductiveness of the channel and thus the current passing through the device.

The HUF75329D3ST is an ideal device for many applications that require low-noise operations and high-speed switching. Its low RDS(on) value and small footprint make it especially suitable for communication systems, power supplies, and other circuits demanding reliable performance.

The specific data is subject to PDF, and the above content is for reference

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