HUF75329D3ST Discrete Semiconductor Products |
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Allicdata Part #: | HUF75329D3STFSTR-ND |
Manufacturer Part#: |
HUF75329D3ST |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 20A DPAK |
More Detail: | N-Channel 55V 20A (Tc) 128W (Tc) Surface Mount TO-... |
DataSheet: | HUF75329D3ST Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 128W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1060pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 20V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The HUF75329D3ST is a popular field effect transistor (FET) used for a variety of applications. This single-channel FET is notable for its high current, low capacitance, and small footprint. It is suited for low-noise operations and is often used in communications systems, power supplies, and other circuits requiring high-speed switching. In this article, we will discuss the application field and working principle of the HUF75329D3ST.
HUF75329D3ST Features
The HUF75329D3ST offers a variety of features that make it ideal for many applications. It has a low on-state drain-to-source resistance (RDS(on)) of 0.1Ω, a high switching current of 6A and a breakdown voltage of 68V. It is also equipped with a fast switching speed, making it suitable for high-speed switching operations. In addition, it has a small footprint of 6mmx4mm and a low gate-charge of 7nC.
HUF75329D3ST Applications
The HUF75329D3ST is well-suited for use in communication systems, power supplies, and circuits requiring high-speed switching. It is especially useful in switching circuits, where its low RDS(on) and fast switching speed makes it ideal for transmitting and receiving signals. It is also commonly used in power supplies and other circuits requiring high reliability and low-noise operations.
HUF75329D3ST Working Principle
The HUF75329D3ST is an insulated-gate field effect transistor (IGFET) with a P-channel MOSFET structure. It works by trapping a charge of electrons in its P-type channel and by modulating the electric field at its gate. When a voltage is applied at the gate, the field causes the electrons to move and the P-type channel is charged. This charge creates a conductive path between drain and source. By modulating the voltage at the gate, it is possible to control the conductiveness of the channel and thus the current passing through the device.
The HUF75329D3ST is an ideal device for many applications that require low-noise operations and high-speed switching. Its low RDS(on) value and small footprint make it especially suitable for communication systems, power supplies, and other circuits demanding reliable performance.
The specific data is subject to PDF, and the above content is for reference
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