Allicdata Part #: | HUF75333S3-ND |
Manufacturer Part#: |
HUF75333S3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 60A TO-262AA |
More Detail: | N-Channel 55V 66A (Tc) 150W (Tc) Through Hole I2PA... |
DataSheet: | HUF75333S3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK (TO-262) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 85nC @ 20V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 66A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 66A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HUF75333S3 is a type of transistor which belongs to the category of FETs and MOSFETs. It’s a single package integrated circuit that is made for high-performance power amplifier applications. It’s a type of efficient power transistor that is capable of producing large current with low on-resistance value. This is why this transistor is widely used in both audio and power applications.
The HUF75333S3 has an insulated gate terminal and a source-coupled drain terminal. The insulated gate terminal controls the drain-source current. The source-coupled drain terminal provides an equivalent protection to the actual drain-source current.
When it comes to the working principle of HUF75333S3, it is quite simple. When the input voltage exceeds a certain threshold, the positive charge carriers in the gate terminals and the negative charge collectors in the source-coupled drain terminals are attracted to the substrate. This leads to electrons travelling between the gate terminal and the source-coupled drain terminal. This causes a flow of current which is amplified by the BJT in the integrated circuit.
As far as the application of the HUF75333S3 is concerned, it’s widely used in audio amplifiers, power supplies, inverters and DC-DC converters. It’s also commonly used in DC motor control and switching devices. Additionally, it’s also used in digital logic circuits such as logic gate and A/D converters.
Overall, the HUF75333S3 is a type of reliable power transistor that is widely used in a variety of applications. Its insulated gate terminal and source-coupled drain terminal allow it to provide strong protection against the actual drain-source current. Plus, its working principle is quite simple and so is its application in various devices. Its high-performance makes it an ideal choice for those seeking reliable and efficient power transistors.
The specific data is subject to PDF, and the above content is for reference
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