Allicdata Part #: | HUF75337P3-ND |
Manufacturer Part#: |
HUF75337P3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 75A TO-220AB |
More Detail: | N-Channel 55V 75A (Tc) 175W (Tc) Through Hole TO-2... |
DataSheet: | HUF75337P3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 175W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1775pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 109nC @ 20V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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HUF75337P3 is an advanced and powerful Field Effect Transistor (FET) designed for applications such as power amplifiers, power switching, and motor control. It is an enhancement-mode n-channel device with low on-state resistance and high performance. This transistor is suitable for DC/DC converters in automotive, industrial, and consumer electronic applications. HUF75337P3 also exhibits excellent switching characteristics with low turn-on and turn-off times.
The HUF75337P3 uses an advanced process architecture providing superior on-state performance in a small plastic package. The HUF75337P3 is an N-channel power MOSFET which supports various operating conditions including pulsed mode. This transistor provides a gate junction voltage rating of 20V DC, a continuous drain current rating of 40A, and a power dissipation capacity of 161 W. It also has an RDS (on) at 10V of 3.2 mΩ and an RDS (on) at a full 4V DS of 4.7mΩ. Additionally, the device has built-in avalanche capability and is equipped with integrated protection diodes.
The working principle of the HUF75337P3 transistor is based on the basic FET principle. This transistor works by making use of an electric field to control the flow of electrons through a channel. When a positive gate voltage is applied, negative charges (electrons) of the FET channel is attracted towards the positive gate terminal, reducing the size of the channel. This will result in increased resistance to the flow of electrons, thus reducing current flow through the transistor. In order to increase the current flow, a negative gate voltage is applied, thereby reducing the size of the channel and increasing the conductivity of the channel.
The HUF75337P3 transistor has a wide range of applications in various industries. It can be used as an high power amplifier in audio and radio systems, as a high-efficiency MOSFET switch in power circuits, and as a high-current, high-frequency switch for motor control and DC/DC converters. The HUF75337P3 is also suitable for smart home automation applications and industrial equipment.
The HUF75337P3 is an efficient, high-performance transistor, suitable for many applications and industries. Its low on-state resistance and built-in protection diodes make it an ideal choice for a wide range of power applications. With its excellent switching characteristics and avalanche capability, it is sure to deliver an outstanding performance.
The specific data is subject to PDF, and the above content is for reference
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