HUF75337S3S

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	175W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1775pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	109nC @ 20V
Series:	UltraFET™
Rds On (Max) @ Id, Vgs:	14 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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HUF75337S3S Application Field and Working Principle

Transistors are semiconductor devices primarily used to switch electrical current and voltage in electronic equipment. Among the members of this electronic component family, the field-effect transistor (FET) holds a special place in the world of electronics due to its wide array of applications and ability to handle high currents. The HUF75337S3S is a type of field-effect transistor (FET) developed by Rohm Semiconductor. It is housed in a SOT-223 package and is used as an N-channel enhancement-mode switch. Its features make it ideal for a range of power management applications, such as AC/DC converters, DC/DC converters, and PFC (power factor correction) circuits. The HUF75337S3S is an N-channel MOSFET, meaning that it contains a single gate terminal with which to control the channel between the source and drain terminals. This gate terminal is isolated from the source and drain and must be charged in order to turn the device on. It is this process of charging the gate terminal that allows the FET to be used as a switch. When the gate terminal is charged, a voltage difference is created across the source and drain terminals. This voltage difference causes an electric field to form between the source and drain, which in turn attracts electrons to the drain terminal. The flow of these electrons through the channel between the source and drain is what allows current to flow from the source to the drain. The HUF75337S3S is capable of handling up to 200V voltage and 17A current. It has an on-resistance of 5mΩ and an off-resistance of 80kΩ. The device is also highly linear, allowing it to be used in applications where little to no distortion of the target signal is desired. The primary advantage of the HUF75337S3S is its low on-resistance, which allows it to switch current more quickly than other FETs. This makes it ideal for high-speed switching applications and power supply systems. Its low cost and small size also make it well-suited for portable electronics. In summary, the HUF75337S3S is a low cost and highly efficient N-channel FET with a wide range of applications. It is designed for use in AC/DC, DC/DC, and PFC circuits and is capable of handling high voltages and currents. Its low on-resistance and linearity make it ideal for high-speed switching applications. The small size and low cost of the HUF75337S3S make it a great choice for portable electronics.

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