HUF75339G3

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The HUF75339G3 is a high voltage single N-Channel enhancement mode Field Effect Transistor (FET). It is manufactured using advanced process technology for superior performance, reliability and long-term operation in harsh environments. This FET can be used in many applications, including switching applications, level shifting, and as an amplifier. The HUF75339G3 is designed for high current applications, with a peak current rating of 7.5A and a maximum drain-source voltage of 500V.

The HUF75339G3 has an operating temperature range of -40°C to 150°C and is capable of handling a wide range of voltage requirements. This FET is capable of providing up to 3A of gate drive current and has a relatively low gate charge of 18nC. Additionally, the HUF75339G3 is equipped with an advanced Gate oxide ESD protection structure, which provides superior ESD protection up to 8kV. This FET is RoHS compliant and is UL recognized with a maximum junction temperature of 175°C.

The working principle of the HUF75339G3 is based on the typical Field Effect Transistor (FET) structure. A FET is a type of amplifier whose output is controlled by a voltage or electric field applied to its gate. In the case of the HUF75339G3, the gate is connected to a control voltage, which determines the flow of current between the source and drain. When a positive voltage is applied to the gate of the FET, the source-drain channel is opened and a current can flow from source to drain. This current is referred to as a drain current and is determined by the gate voltage. The higher the gate voltage, the greater the drain current. In this way, the HUF75339G3 can be used as an amplifier, or for switching applications such as level shifting or current limiting.

The HUF75339G3 is a convenient and reliable choice for applications which require high current handling, superior ESD protection, and a low gate charge to support faster switching speeds. It has a wide range of applications in many industries, including automotive, power conversion, and consumer electronics. This FET is well-suited for use in applications where high voltage and high currents are needed, such as automotive DC/DC converters and LED lighting. The HUF75339G3 is also suitable for low noise, high frequency switching and low voltage drop circuits.

In conclusion, the HUF75339G3 is a high voltage single N-Channel enhancement mode Field Effect Transistor (FET) with many advantages. Its superior performance, reliability, and high current ratings make it well-suited for use in many applications which require higher voltages and currents. It is capable of providing a high peak current of up to 7.5A, a low gate charge of 18nC, and a wide operating temperature range of -40°C to 150°C. With its advanced Gate oxide ESD protection structure, the HUF75339G3 has the ability to provide superior ESD protection up to 8kV, making it a robust choice for commercial and industrial applications.

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