Allicdata Part #: | HUF75343G3-ND |
Manufacturer Part#: |
HUF75343G3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 75A TO-247 |
More Detail: | N-Channel 55V 75A (Tc) 270W (Tc) Through Hole TO-2... |
DataSheet: | HUF75343G3 Datasheet/PDF |
Quantity: | 1000 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 205nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3000pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 270W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The HUF75343G3 is a single N-channel automotive qualified MOSFET chip designed to drive high-current loads in automotive applications. This device provides superior EMC robustness and reliable performance in automotive conditions. It offers excellent thermal performance, fast switching time, and low input capacitance for improved efficiency and reliability. The HUF75343G3 is also able to handle high switching frequencies with ease. In addition, its robust design ensures good thermal management during high-current loads. This MOSFET chip is ideal for applications in automotive power electronics, such as DC-DC converters, power conversion, motor controllers, and other power electronics applications.
The HUF75343G3 is an N-channel MOSFET, meaning it is composed of an insulated gate connected to a source. This gate is extremely sensitive to electrical signals and can alter the current flowing through the device when a specific voltage is applied. This gate voltage is determined by the MOSFET\'s threshold voltage (VTH), which is the minimum gate voltage required to get the device to turn on. The amount of electrical current that flows through the device, known as the drain current (ID), will be proportional to the gate voltage applied.
The HUF75343G3 features a maximum drain source voltage (VDS) of 40V and a drain current (ID) of 92A. It is rated for an operating temperature range of -40°C to 150°C, and it has a maximum junction temperature of 175°C. It also provides excellent gate capacitance, gate boost voltage and gate drive resistance to ensure an efficient switching process. Moreover, it has very low on-resistance and a fast switching time, so it is well-suited for high-speed switching applications.
To operate the HUF75343G3, the gate voltage must first be driven to the threshold voltage and then increased to the required operating bias voltage. This can be done with a suitable driver circuit. Once powered up, the drain voltage must be applied to the drain terminal and the resulting current, referred to as the drain current, will be proportional to the gate voltage applied. The device will only switch on when the applied gate voltage is greater than the threshold voltage.
The HUF75343G3 is a robust and highly reliable MOSFET chip, ideal for automotive and power electronics applications dealing with high current requirements. Its fast switching speed, low on-resistance and high current capacity allows this device to efficiently drive large loads with ease, while its robust design ensures a long-lasting operation even in extreme conditions.
The specific data is subject to PDF, and the above content is for reference
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