HUF75343S3ST

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HUF75343S3ST is a high side, low and high side integrated switch developed by Rohm semiconductors. It is widely used in a variety of systems, far beyond the traditional automotive field. This automotive MOSFET comes in the high power conditioning processors family and can operate between 4.5V to 42V.

The HUF75343S3ST is suitable for all types of applications, including automotive, industrial, medical, and consumer electronics. This MOSFET is ideal for protecting high power circuits due to its wide operating range, owing to its low on-state resistance and logic level drive capability. It is also compatible with both PNP and NPN input signals.

HUF75343S3ST utilizes a source-drain current, a device used for controlling the current along two specific paths. It is also composed of a gate-source voltage, which creates a strong electric field between the gate and the source. This voltage functions as a switch, allowing current to pass through the device or preventing the current from passing through it.

The HUF75343S3ST is an ideal device for applications such as power switches, relays, motor drives, inverters, and DC-DC converters. This low/high side switching device can handle up to 15A of average DC load current with a maximum gate to source voltage VGS of ±20V. It provides voltage drop of just 78mV at 15A, giving it high efficiency and low power loss.

HUF75343S3ST offers a range of features that makes it suitable for many applications. It has efficient thermal characteristics and features fast switching performance, thanks to its soft-start technology. In addition, its low subthreshold drain-to-source voltage VDSS means this device works well under harsh environmental conditions.

Moreover, the HUF75343S3ST has a built-in under-voltage/over-voltage protection (UV/OV protection), short-circuit protection and thermal overload protection. Its very low power consumption means it is widely used in battery-powered systems, including automotive and portable devices. Also, its built-in over-temperature protection lets it self-protect and keep the system safe.

The HUF75343S3ST has a high immunity interface, which can tolerate any level of EMI radiation and eliminate ground shift errors. It is also compatible with a variety of control ICs with its PWM capability, allowing it to be integrated in various solutions.

In conclusion, the HUF75343S3ST is the ideal choice for a wide range of applications, thanks to its wide operating voltage range, compatibility with a variety of control ICs, and robust protection features. This MOSFET is suitable for protecting high power circuits with its low on-state resistance and logic level drive. It is a great choice for automotive, industrial, medical and consumer applications.

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