Allicdata Part #: | HUF75345P3-ND |
Manufacturer Part#: |
HUF75345P3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 75A TO-220AB |
More Detail: | N-Channel 55V 75A (Tc) 325W (Tc) Through Hole TO-2... |
DataSheet: | HUF75345P3 Datasheet/PDF |
Quantity: | 847 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 325W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 275nC @ 20V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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HUF75345P3 is a powerful and popular power field-effect transistor (FET) that is well-suited for use in industrial, commercial and home appliances applications. It is widely used in applications such as power supplies, inverters, amplifiers and motor controllers.
HUF75345P3 belongs to the family of single MOSFETs, which are transistors with one gate, one drain and one source in which the base current is controlled by a single gate terminal. A single MOSFET is also known as “a simple FET” as it can be thought of as a single-switch FET with just one gate terminal.
The single gate helps to minimize gate resistance, which increases the switch\'s conduction time, making the switch more efficient. The gate structure of a single MOSFET also reduces the device\'s size and cost, making it a preferred choice for applications requiring parallel switching of multiple devices.
The HUF75345P3 is a power MOSFET made by the Japanese manufacturer, Hitachi Semiconductor. It is an N-channel silicon gate-controlled device with a drain-to-source breakdown voltage of 200V, and a drain-current of 40A. The HUF75345P3 has a maximum operating junction temperature of 175 degrees Celsius and a maximum power dissipation of 500 watts.
The HUF75345P3’s working principle involves the application of an electric field across the gate-source region to create an inversion layer. This inversion layer acts as a conducting channel between the drain and the source terminals. When an appropriate gate voltage and current are applied, this inversion layer increases in conductivity, allowing current to flow from the drain to the source.
The HUF75345P3 is well-suited for a variety of applications including power supplies and other circuit protections, DC-DC converters, motor controls and audio amplifiers. In particular, it is commonly used in applications requiring high power switching, such as electrical appliances, power tools and automotive electronics.
Moreover, the HUF75345P3 has the advantage of a low on-state resistance, low gate charge and excellent dv/dt capability, making it an ideal device for high frequency switching applications.
In conclusion, the HUF75345P3 is a powerful and popular single MOSFET that is well-suited for a variety of applications, especially those requiring high power switching. Its low on-state resistance, low gate charge, and excellent dv/dt capability make it an ideal device for high frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
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