HUF75345S3S

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The HUF75345S3S is an advanced single N-channel MOSFET produced by an international semiconductor company, On Semiconductor. This MOSFET is designed for high-frequency switching, low gate charge and fast switching speeds, along with its low on-resistance combined with good power dissipation. In addition, this device comes with a full array of ESD-protection built in to ensure reliable operation in a variety of conditions and make it suitable for a wide range of applications.

In terms of application field, this device is mainly used as a switch or linear amplifier in power management, telecommunication systems, automotive, audio amplifiers, computers, and many other applications needing high speed switching and low on resistance. Some of the typical applications in which it is used include automatic fan controllers, lamps, passive power supplies, and power switches. It can also be used in any application that requires low gate charge and fast switching, such as LED drivers, LED dimmers and power controllers.

The HUF75345S3S is a symmetrical N-channel MOSFET, meaning it is designed to be operated with equal voltages in both directions, positive and negative voltage respectively. This is important in applications where the voltage is occasionally reversed. This MOSFET is mainly characterized by its low on-resistance, low gate charge and fast switching times. The low gate charge is achieved in part thanks to the device’s level shift technology and precision machining techniques.

The HUF75345S3S is designed to run at a supply voltage in the range from 12V to 45V. Its drain-source resistor, RDS(on), is typically 0.002 Ω, while its gate-source threshold voltage is 2.6 V. Its drain current is 360 mA and its total power dissipation is 0.5 Watts. Additionally, its turn-offs time, tOff, and turn-on time, tOn, are 70 nsec and 160 nsec respectively.

To understand the working principle of the HUF75345S3S it is important to know that this device is a voltage-controlled field effect transistor (FET). This means that the transistor is controlled through its gate-source voltage. When a positive voltage is applied between its gate and source, the resistance between the drain and source terminals is reduced. This is referred to as an enhancement mode transistor and it is commonly used in applications that require higher switching frequencies. On the other hand, when a negative voltage is applied between its gate and source, the resistance again between the drain and source terminals is increased. This is referred to as a depletion mode transistor and it is mainly used in applications that require the transistor to be less sensitive to electrical noise.

The key benefit of the HUF75345S3S is its low gate charge. This results in higher switching speeds and lower power consumption as compared to other types of MOSFETs. The device is also capable of dissipating up to 0.5 watts of power while keeping its on-resistance relatively low. This makes it suitable for a wide range of applications that require high speed switching and low on resistance operations.

In conclusion, the HUF75345S3S is an advanced single N-channel MOSFET designed for high-frequency switching, low gate charge and fast switching speeds. It is mainly used for switching or linear applications in power management, telecommunication systems, automotive, audio amplifiers, computers, and other applications. It is characterized by its low on-resistance, low gate charge and fast switching time. It is a voltage controlled field effect transistor with an RDS(on) of typically 0.002 Ω and a total power dissipation of 0.5 watts. The key benefit of the device is its low gate charge which results in higher switching speeds and lower power consumption.

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