HUF75345S3ST Discrete Semiconductor Products |
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Allicdata Part #: | HUF75345S3STTR-ND |
Manufacturer Part#: |
HUF75345S3ST |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 75A D2PAK |
More Detail: | N-Channel 55V 75A (Tc) 325W (Tc) Surface Mount D²P... |
DataSheet: | HUF75345S3ST Datasheet/PDF |
Quantity: | 3200 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 325W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 275nC @ 20V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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A HUF75345S3ST is an N-Channel MOSFET transistor, specifically designed for use in the medium power segment. This device from Infineon Technologies is designed for high demanding applications, such as static switches, Power Extensions, and many more.
The HUF75345S3ST has a maximum drain current ID of 75 A @ 25 °C and can handle a drain source voltage of 175 V. It also has an average Gate source voltage of 10 V. In addition, the HUF75345S3ST features very good switching performance with turn-on times of less than 10 ns and turn-off times of less than 20 ns. This makes it ideal for high-speed switching applications.
When it comes to the working principle of the HUF75345S3ST, it is basically an enhancement type MOSFET, which operates by applying a small electrical signal to its Gate terminal. It then amplifies this signal across its Drain and Source terminals. It is able to do this because its internal structure consists of a very thin layer of gate material, which acts to separate the gate from the channel. When a positive voltage is applied to the gate, the gate draws electrons from the channel, thereby causing a depletion region to form. This depletion region is what helps the HUF75345S3ST to amplify the signal across its Output and Source terminals.
Because of its high current carrying capacity and fast switching speeds, the HUF75345S3ST is suitable for use in a wide range of applications. These include static switches, Power Extensions, general purpose DC-DC converters, automotive applications, and more.
The HUF75345S3ST is also a great choice for applications where power efficiency is paramount. This is due to its low on-state resistance, which helps to reduce power losses when the device is used in high power applications. This helps to make the system more energy efficient, improving the overall performance.
Overall, the HUF75345S3ST is an excellent choice for a variety of applications. It has great switching speeds and a high current carrying capacity, making it suitable for high power applications. In addition, it also has a low on-state resistance, making it great for applications where power efficiency is of the utmost importance.
The specific data is subject to PDF, and the above content is for reference
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