HUF75531SK8T Allicdata Electronics
Allicdata Part #:

HUF75531SK8T-ND

Manufacturer Part#:

HUF75531SK8T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 80V 6A 8-SOP
More Detail: N-Channel 80V 6A (Ta) 2.5W (Ta) Surface Mount 8-SO...
DataSheet: HUF75531SK8T datasheetHUF75531SK8T Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 82nC @ 20V
Series: UltraFET™
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The HUF75531SK8T is a Field-Effect Transistor (FET) found in a variety of consumer and industrial electronics and appliances. It is a depletion-mode MOSFET, which means it is designed to switch current off when it is triggered by a gate voltage, allowing it to act as a switch in electronics. The HUF75531SK8T is a single FET, meaning it has one channel, and is used most commonly in low-power applications.

Applications

Due to its low power rating, the HUF75531SK8T is more commonly used in small consumer devices where there is not typically a need for heavy-duty power control, such as remote controllers and electronic toys. The HUF75531SK8T can also be found in some industrial applications such as motor controllers and automotive systems. As the HUF75531SK8T is designed for low-power applications, it is not typically suited for more powerful applications, such as automotive power control or home air conditioning, where larger, higher-power FETs are usually the better choice.

Working Principle

The HUF75531SK8T operates as a voltage-controlled switch, meaning by controlling the voltage to the FET\'s gate, it can switch the current off or on. It works by using an insulated floating gate to control the width of an electric field created between the source and drain of the FET. By applying a voltage to the gate of the FET, the electric field\'s width narrows, reducing the current flow between the source and drain, effectively turning the current off. Reversing the voltage to the gate will open the electric field, allowing current to flow unhindered between the source and drain, which turns the current on.

This basic principle of operation allows the HUF75531SK8T (and other bipolar transistors) to be used to switch current on and off in applications requiring extremely high accuracy and precision. For instance, in a radio receiver, the FET can be used to switch between the input and output of the circuit depending on the voltage. This allows for extremely precise control of the radio receiver\'s output by adjusting the gate voltage accordingly.

Conclusion

The HUF75531SK8T is a single FET designed for low-power applications, such as remote controllers and toys. It can also be used in industrial applications such as motor controllers and automotive systems. The FET works by using an insulated floating gate to control the width of an electric field created between the source and drain, which can switch the current off or on by controlling the gate voltage. This allows the HUF75531SK8T to be used in applications requiring highly precise control, such as radio receivers.

The specific data is subject to PDF, and the above content is for reference

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