Allicdata Part #: | HUF75531SK8T-ND |
Manufacturer Part#: |
HUF75531SK8T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 80V 6A 8-SOP |
More Detail: | N-Channel 80V 6A (Ta) 2.5W (Ta) Surface Mount 8-SO... |
DataSheet: | HUF75531SK8T Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1210pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 82nC @ 20V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The HUF75531SK8T is a Field-Effect Transistor (FET) found in a variety of consumer and industrial electronics and appliances. It is a depletion-mode MOSFET, which means it is designed to switch current off when it is triggered by a gate voltage, allowing it to act as a switch in electronics. The HUF75531SK8T is a single FET, meaning it has one channel, and is used most commonly in low-power applications.
Applications
Due to its low power rating, the HUF75531SK8T is more commonly used in small consumer devices where there is not typically a need for heavy-duty power control, such as remote controllers and electronic toys. The HUF75531SK8T can also be found in some industrial applications such as motor controllers and automotive systems. As the HUF75531SK8T is designed for low-power applications, it is not typically suited for more powerful applications, such as automotive power control or home air conditioning, where larger, higher-power FETs are usually the better choice.
Working Principle
The HUF75531SK8T operates as a voltage-controlled switch, meaning by controlling the voltage to the FET\'s gate, it can switch the current off or on. It works by using an insulated floating gate to control the width of an electric field created between the source and drain of the FET. By applying a voltage to the gate of the FET, the electric field\'s width narrows, reducing the current flow between the source and drain, effectively turning the current off. Reversing the voltage to the gate will open the electric field, allowing current to flow unhindered between the source and drain, which turns the current on.
This basic principle of operation allows the HUF75531SK8T (and other bipolar transistors) to be used to switch current on and off in applications requiring extremely high accuracy and precision. For instance, in a radio receiver, the FET can be used to switch between the input and output of the circuit depending on the voltage. This allows for extremely precise control of the radio receiver\'s output by adjusting the gate voltage accordingly.
Conclusion
The HUF75531SK8T is a single FET designed for low-power applications, such as remote controllers and toys. It can also be used in industrial applications such as motor controllers and automotive systems. The FET works by using an insulated floating gate to control the width of an electric field created between the source and drain, which can switch the current off or on by controlling the gate voltage. This allows the HUF75531SK8T to be used in applications requiring highly precise control, such as radio receivers.
The specific data is subject to PDF, and the above content is for reference
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