Allicdata Part #: | HUF75545S3S-ND |
Manufacturer Part#: |
HUF75545S3S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 80V 75A D2PAK |
More Detail: | N-Channel 80V 75A (Tc) 270W (Tc) Surface Mount D²P... |
DataSheet: | HUF75545S3S Datasheet/PDF |
Quantity: | 1000 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 235nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3750pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 270W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263AB) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HUF75545S3S is a MOSFET (metal-oxide-semiconductor field-effect transistor) with a single gate terminal. It is a voltage controlled device typically used for amplifying or switching electronic signals. The device can be used in a wide range of applications, from simple audio amplifiers to complex power management systems (PMS) in medical equipment and other industrial settings.
MOSFETs, as opposed to BJT transistors, have the advantage of higher input impedances and switching speeds, making them better suited for applications that require high input impedances and need to switch rapidly. In addition, MOSFETs have lower power dissipation compared to BJT transistors and this makes them particularly suitable for energy efficient solutions.
HUF75545S3S is well-suited for a range of applications, especially in medium- and low-power electronic systems. It has a low on-state resistance, which is suitable for applications requiring high current drive like power switching, motor control and audio amplifiers. The drive current is adjustable with external components, giving the user the flexibility to optimize power efficiency. Also, the low input capacitance of the MOSFET gives the system a high switching speed that can be used in applications needing high speed switching, like PWM switching and frequency converters.
The working principle of HUF75545S3S is quite simple. It works by connecting the Enable pin to the Source pin, which links to the gate of the MOSFET, and then applying a voltage to the gate. This causes electrons to be drawn from the source to the gate and the MOSFET turns on. When the voltage is removed from the gate, the electrons are drawn away from the gate and the MOSFET turns off. This control voltage can be applied using a logic level or a DC voltage, depending on the application.
HUF75545S3S is a great choice for a wide range of applications and its low power consumption and simple working principle make it a popular MOSFET device. It is a cost-effective solution to many power management problems in various industries. It can be used to reduce power dissipation and improve efficiency in electrical systems. Thanks to its low cost, ease of use, and wide range of applications, HUF75545S3S has become a popular choice in many electronics projects.
The specific data is subject to PDF, and the above content is for reference
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