HUF75545S3ST Discrete Semiconductor Products |
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Allicdata Part #: | HUF75545S3STTR-ND |
Manufacturer Part#: |
HUF75545S3ST |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 80V 75A D2PAK |
More Detail: | N-Channel 80V 75A (Tc) 270W (Tc) Surface Mount D²P... |
DataSheet: | HUF75545S3ST Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 270W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3750pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 235nC @ 20V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HUF75545S3ST is a double-channel N-channel enhancement-mode power MOSFET. It is an excellent semiconductor device that has a great number of applications in areas such as consumer electronics, automotive, industrial use, and more. The MOSFET stands out because of its superior thermal characteristics, superior reliability, and low on-resistance. In this article, we take a closer look at the HUF75545S3ST application fields and its working principle.
Application Fields:
The HUF75545S3ST MOSFET is extensively used in high-end consumer electronic product applications such as audio power amplifiers, power supplies and DC-DC converters. It is popular for its low on-resistance, superior current handling capacity, excellent thermal characteristics and superior reliability. Furthermore, it is also used in automotive and industrial motor control, power switching, and power semiconductor devices. It has also been widely used in LED lighting, LED backlight , and as an energy saving driver.
Working Principle:
MOSFETs work on the principle of channel formation. They are created when two metal contacts are placed in close proximity to each other and separated only by a thin dielectric layer. An electric field forms between them, and a channel is created when electrons are allowed to flow through the dielectric layer. The channel acts as a switch and allows and blocks the flow of electrons depending on the voltage applied to the embedded gate.
When the HUF75545S3ST is off, the channel does not exist and no current can flow from drain-to-source. The combination of a low on-resistance, better thermal characteristics and superior performance make the HUF75545S3ST an excellent choice for power MOSFET applications.
In summary, the HUF75545S3ST is an excellent choice for designers who need a highly reliable power switching device suitable for all kinds of applications. The combination of its low on-resistance, superior current handling, excellent thermal characteristics and superior reliability make it an ideal choice for demanding power switching applications.
The specific data is subject to PDF, and the above content is for reference
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