HUF75545S3ST Allicdata Electronics

HUF75545S3ST Discrete Semiconductor Products

Allicdata Part #:

HUF75545S3STTR-ND

Manufacturer Part#:

HUF75545S3ST

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 80V 75A D2PAK
More Detail: N-Channel 80V 75A (Tc) 270W (Tc) Surface Mount D²P...
DataSheet: HUF75545S3ST datasheetHUF75545S3ST Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 270W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 235nC @ 20V
Series: UltraFET™
Rds On (Max) @ Id, Vgs: 10 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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HUF75545S3ST is a double-channel N-channel enhancement-mode power MOSFET. It is an excellent semiconductor device that has a great number of applications in areas such as consumer electronics, automotive, industrial use, and more. The MOSFET stands out because of its superior thermal characteristics, superior reliability, and low on-resistance. In this article, we take a closer look at the HUF75545S3ST application fields and its working principle.

Application Fields:

The HUF75545S3ST MOSFET is extensively used in high-end consumer electronic product applications such as audio power amplifiers, power supplies and DC-DC converters. It is popular for its low on-resistance, superior current handling capacity, excellent thermal characteristics and superior reliability. Furthermore, it is also used in automotive and industrial motor control, power switching, and power semiconductor devices. It has also been widely used in LED lighting, LED backlight , and as an energy saving driver.

Working Principle:

MOSFETs work on the principle of channel formation. They are created when two metal contacts are placed in close proximity to each other and separated only by a thin dielectric layer. An electric field forms between them, and a channel is created when electrons are allowed to flow through the dielectric layer. The channel acts as a switch and allows and blocks the flow of electrons depending on the voltage applied to the embedded gate.

When the HUF75545S3ST is off, the channel does not exist and no current can flow from drain-to-source. The combination of a low on-resistance, better thermal characteristics and superior performance make the HUF75545S3ST an excellent choice for power MOSFET applications.

In summary, the HUF75545S3ST is an excellent choice for designers who need a highly reliable power switching device suitable for all kinds of applications. The combination of its low on-resistance, superior current handling, excellent thermal characteristics and superior reliability make it an ideal choice for demanding power switching applications.

The specific data is subject to PDF, and the above content is for reference

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