HUF75623S3ST

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	85W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	790pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	52nC @ 20V
Series:	UltraFET™
Rds On (Max) @ Id, Vgs:	64 mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	22A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

HUF75623S3ST is a single-gate transistor developed by n-channel FETs and MOSFETs. It is a high voltage transistor with an integrated shielded gate structure and a floating gate control port which allows the user to control the transistor by controlling the voltage at the gate.The HUF75623S3ST has a wide range of applications. It can be used in switching circuits, high current and voltage drives, switching power supplies and voltage regulators. It is widely used in electronic devices such as televisions, media players and computers, as well as in automotive, medical and industrial applications.The working principle of the HUF75623S3ST is based on the field effect mechanism. A voltage is applied to the gate of the transistor, which causes a shift in the position of the FETs and MOSFETs with respect to the drain and source, allowing or blocking the flow of current. The voltage at the gate can be controlled to control the current flow in the transistor, thus controlling the output of the device.The HUF75623S3ST has several advantages over other transistors. It is a low-cost and low-noise device and is suitable for high frequency applications. It has a wide gate-source voltage range and a wide gate-drain current range, allowing it to be used in a variety of applications. The device also has self-protection features, such as over-current, reverse transient protection and over-temperature protection, which provide extra protection to the device against accidental damage.The HUF75623S3ST is a versatile and reliable transistor, offering a range of features and applications to meet a variety of needs. It is capable of handling large currents and voltages and can be used in a wide range of applications, from consumer electronics to industrial applications. It is suitable for use in both digital and analog circuits and is available in various packages to suit different requirements. Its low-cost and versatility make it an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description