Allicdata Part #: | HUF75631P3-ND |
Manufacturer Part#: |
HUF75631P3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 33A TO-220AB |
More Detail: | N-Channel 100V 33A (Tc) 120W (Tc) Through Hole TO-... |
DataSheet: | HUF75631P3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 120W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1220pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 79nC @ 20V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 33A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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HUF75631P3 is a type of N-channel MOSFET (metal-oxide semiconductor field effect transistor). It is specially designed for automotive applications and is suitable for operations in the temperature range of -55°C to +175°C. The device is designed for the power supply of ignition systems, improved start-stop behavior, short-circuit protection, and electric motors in automotive appplications.
MOSFETs are voltage controlled devices, meaning that they can be switched using a low-power input signal to control a large amount of power. Field effect transistors are also capable of producing high frequency switching. In other words, they can be used either as amplifiers or as switches. As an electrical switch, HUF75631P3 is an effective solution for automotive applications where it is important to switch the power supply quickly and accurately.
The construction of the HUF75631P3 is similar to that of a standard MOSFET. The device is composed of three terminals (source, gate and drain), placed between two semiconductor plates or layers. The gate is the control terminal, and is usually connected to a low-power digital or analog signal that can control the current flowing through the device. The source and drain terminals are both connected to the power supply.
The operation of the HUF75631P3 is based on the principle of a negative field effect. This means that when a negative gate voltage is applied to the device, the drain-source path is opened and current flow is allowed to pass through. In contrast, when the device is in its off state, the gate voltage must be at a higher potential than the source voltage in order to open the channel. This prevents any current from flowing through the device.
The HUF75631P3 is mainly deployed in automotive applications. One of its main uses is in the power supply of ignition systems. It can switch on/off the power supply for the ignition system quickly and accurately, ensuring that the ignition system runs properly. The device is also used for short-circuit protection and improved start-stop behavior. It can detect any sudden current increase and then quickly switch off the power supply, thus protecting the electrical systems from damage. HUF75631P3 can also be used in electric motors, such as those in electric vehicles, to ensure that they start quickly and operate smoothly.
In summary, HUF75631P3 is an N-channel MOSFET specially designed for automotive applications, mainly deployed in ignition systems, improved start-stop behavior, short-circuit protection and electric motors. It operates based on the principle of negative field effect, switching off the power supply quickly and accurately when a negative gate voltage is applied. The device employs a three terminal construction (source, gate and drain) and is capable of operating in the temperature range of -55°C to +175°C.
The specific data is subject to PDF, and the above content is for reference
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