Allicdata Part #: | HUF75631S3S-ND |
Manufacturer Part#: |
HUF75631S3S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 33A D2PAK |
More Detail: | N-Channel 100V 33A (Tc) 120W (Tc) Surface Mount D²... |
DataSheet: | HUF75631S3S Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 120W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1220pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 79nC @ 20V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 33A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The HUF75631S3S is a 30V single N-channel TrenchMOS® FET. It is designed to withstand high energy in the avalanche and commutation modes. This device is intended for use in low current low noise applications, such as lighting and power supplies. It is available in the thermally enhanced PowerPAK MO-229 package.
The HUF75631S3S is manufactured using a special high-speed process which combines the best features of advanced planar, TrenchMOS®, and N-channel MOSFET technologies. It features an improved voltage rating, low on-resistance, high-speed switching, and low input and output capacitances.
The application field of HUF75631S3S is mainly related to low-current, low-noise circuits which require low on-resistance to reduce conduction losses. The device has been designed to enhance switching performance and to operate efficiently in both the avalanche and commutation modes. It is suitable for applications such as driving LEDs, DC-DC converters, motor drivers, and other power conversion circuits.
The working principle of HUF75631S3S is based on the basic MOSFET structure. It uses the charge carrier flow of electrons and the gate-source voltage to control the current flow between the source and the drain region. The drain-source voltage thus actuates the FET and changes the electrical characteristics of the device.
When a positive voltage is applied to the gate electrode, the charge carriers, which are electrons, flow from the source to the drain, thus resulting in a low-resistance channel. As the gate voltage increases, the current increases as well. Similarly, a negative voltage applied to the gate decreases the current flow.
The HUF75631S3S is ideal for a range of applications due to its low-on resistance and high-speed switching characteristics. It is also capable of operating efficiently in both the forward and reverse directions. In addition, it offers low input and output capacitance, making it ideal for circuits requiring low frequency operation.
The HUF75631S3S is an excellent choice for a variety of applications requiring low noise, fast response times, and efficiency. It is capable of providing consistent performance and offers enhanced power saving capabilities compared to traditional devices. Its high current capability makes it suitable for a range of applications, including motor control, power conversion, switching power supplies, lighting, and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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