HUF75631S3ST Discrete Semiconductor Products |
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Allicdata Part #: | HUF75631S3STFSTR-ND |
Manufacturer Part#: |
HUF75631S3ST |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 33A D2PAK |
More Detail: | N-Channel 100V 33A (Tc) 120W (Tc) Surface Mount D²... |
DataSheet: | HUF75631S3ST Datasheet/PDF |
Quantity: | 1600 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 120W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1220pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 79nC @ 20V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 33A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The HUF75631S3ST is a type of transistor that fits into the FETs, MOSFETs – Single classification. This type of transistor is a surface-mount, N-channel, enhancement-mode vertical double diffused MOS field-effect transistor (DMOSFET). The transistor is designed with a low gate charge and rounded vibro-diode breakdown performance for applications that require a high level of reliability and performance.
This particular transistor has a drain current rating of 67A, an on-state resistance of 0.37 mΩ, and a drain-source breakdown voltage rating of 30-120V. The HUF75631S3ST features a diode-connected source that allows for easy protection against reverse currents due to malfunctions or external circuit conditions.
Applications for the HUF75631S3ST include power supplies, converters, motor controllers, and other automotive applications. This type of transistor is well suited for applications where low on-state resistance and high power dissipation are required. In addition, the HUF75631S3ST is well-suited for use in boards with limited space, as it is very small and lightweight.
The working principle of the HUF75631S3ST is based on the principle of a field-effect transistor. The transistor is formed by two p-type and one n-type regions within the semiconductor, connected together by a metallic gate. As the gate voltage is increased, the resistance between the drain and source terminals decreases. This, in turn, causes a current to flow from the drain to the source terminals. The transistor can also be used in reverse-enhancement mode, where a decrease in the gate voltage increases the resistance between the drain and source terminals.
Although the HUF75631S3ST is limited to N-channel devices, it can be used in either depletion or enhancement modes. This ability makes this particular type of transistor a versatile device for a variety of applications. These include high current switching, linear and load control, and embedded logic functions. In addition, this type of transistor is also suitable for low-power applications, since it has a low gate-drain capacitance.
The HUF75631S3ST is a robust and reliable transistor that is suitable for a variety of applications. It is a surface-mount type transistor that is ideal for use in space-constrained boards. It is designed with a low gate charge and rounded vibro-diode breakdown performance, making it a cost-effective solution for applications that require a high level of reliability and performance.
The specific data is subject to PDF, and the above content is for reference
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