HUF75631SK8T

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HUF75631SK8T Application Field and Working Principle

The HUF75631SK8T is a high voltage super junction MOSFET which is suitable for various applications under high switching frequency and high temperature conditions. HUF75631SK8T has excellent ESD protection performance to protect the continuity of modern applications. The device is one of the most compact solutions that operate at 500V and is designed with a built-in fast body diode, which can be used in applications such as automotive power train, industrial motor drives, industrial grade AC/DC and DC/DC converters and DC/AC inverters.

Application field

The HUF75631SK8T is mainly applied in automotive power train, motor drives, AC/DC, DC/DC and DC/AC converters. The HUF75631SK8T is also used in point of load applications with minimum voltage drop and maximum efficiency. Furthermore, HUF75631SK8T can be used in battery charging circuits and solar power plants. It is an ideal choice for the designers to minimize losses in the application circuit and maximize efficiency in the application.

Features

• Drain source voltage rating: 500V
• MAXIMUM RDS(on): 7.6mΩ
• Status: Active
• Number of Voltages Controlled: 1
• Type: Super Junction MOSFET
• Number of Elements: Single
• Current Rating: 220 A

Working principle

HUF75631SK8T is an enhancement type MOSFET, which means it can be switched on and off by applying a small electrical signal at the gate. The Drain-Source voltage (V_ds) and the gate voltage (V_gs) are related by the following characteristic equation:

V_gs = V_th + γ(V_ds + |V_gss|)

Where V_th is the gate threshold voltage, and γ is the non-linear channel region current gradient, and V_gss is the gate-source substrate offset voltage.

The gate threshold voltage is affected by external conditions such as temperature, so the drain source voltage needed to turn on the MOSFET is also affected. To ensure stable operations, the gate-source substrate offset voltage, V_gss, compensates the variations in the threshold voltage caused by environmental condition changes.

Once the MOSFET is switched on, the drain current is a function of drain-source voltage, V_ds, as per the following equation:

I_d = β(V_gs - V_th)(V_ds - V_th)²

Where β is the channel enhancement factor, and V_th is the gate threshold voltage.

The Drain-Source terminal of the MOSFET is the primary current carrying terminal, and the Gate-Source terminal is used for switching the device on and off. To ensure that the Gate-Source terminal is not damaged due to the large current flow through it, the maximum Gate-Source voltage should be within 7 Volts.

Conclusion

HUF75631SK8T is a high voltage super junction MOSFET which is suitable for various applications such as automotive power train, industrial motor drives, industrial grade AC/DC and DC/DC converters and DC/AC inverters. It has excellent ESD protection performance and provides minimum voltage drop and maximum efficiency when applied to point of load applications. The device can be switched on and off by applying a small electrical signal at the gate and its drain current is a function of its drain-source voltage.

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