Allicdata Part #: | HUF75637P3-ND |
Manufacturer Part#: |
HUF75637P3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 44A TO-220AB |
More Detail: | N-Channel 100V 44A (Tc) 155W (Tc) Through Hole TO-... |
DataSheet: | HUF75637P3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 44A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 44A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 108nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 155W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
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The HUF75637P3 is a silicon N-Channel Power MOSFET used in a variety of electronic components. It is one of the most versatile and popular types of transistor, due to its wide range of applications and cost effectiveness. In this article, the application field and working principle of the HUF75637P3 will be described in further detail.
The HUF75637P3 is a power MOSFET transistor used for high-power switching applications and can be used in DC-DC converters, motor drives, motor control, and high-current switching. It is designed to be used in applications such as switching power supplies, motor drives, heating and cooling systems, motor controls, LED drivers, switching regulators, and others where power high-side and low-side N-channels are necessary.
The HUF75637P3 is designed to deliver high performance with low on-resistance and low capacitance. It also offers low input capacitance which helps it to achieve fast switching with low power dissipation. This makes the HUF75637P3 ideal for use in high current and high frequency applications, where fast switching and low power dissipation is necessary.
The working principle of the HUF75637P3 is based on the MOSFET, or metal oxide semiconductor field effect transistor. It is based on the principle of field effect control, which means that the voltage applied to the gate of the transistor influences the current flowing through the MOSFET. The gate voltage controls whether current can flow through the MOSFET or not, and the amount of current that can flow is dependent on the gate voltage. As the applied voltage is increased, more current will flow through the MOSFET, which allows for the switching action to be performed.
The HUF75637P3 is a single N-Channel Power MOSFET, which means that it is designed for high current, high frequency applications. It is available in two styles: the HUF75637P3-L, which is designed for low-side switching; and the HUF75637P3-H, which is designed for high-side switching. The HUF75637P3 also has a low on-resistance, as well as low input and output capacitances, making it ideal for use in applications where fast switching and low power dissipation are necessary.
In summary, the HUF75637P3 is a single N-Channel Power MOSFET transistor commonly used in many high power switching applications. It is designed for high current and high frequency applications and offers high performance with low on-resistance and low capacitance. It is an ideal solution for applications where fast switching and low power dissipation are necessary.
The specific data is subject to PDF, and the above content is for reference
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