HUF75639S3ST Discrete Semiconductor Products |
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| Allicdata Part #: | HUF75639S3STTR-ND |
| Manufacturer Part#: |
HUF75639S3ST |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 100V 56A D2PAK |
| More Detail: | N-Channel 100V 56A (Tc) 200W (Tc) Surface Mount D²... |
| DataSheet: |  HUF75639S3ST Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D²PAK (TO-263AB) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 200W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 20V |
| Series: | UltraFET™ |
| Rds On (Max) @ Id, Vgs: | 25 mOhm @ 56A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 56A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HUF75639S3ST is an advanced power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by STMicroelectronics. This transistor is comprised of an insulated gate, a source and a drain, which are used to control the current flow between them by utilizing a gate voltage. This technology is integral in a wide range of applications.In HUF75639S3ST application field, this transistor is widely used for various switching applications, for example, it can be used as a switch for controlling the flow of current in circuits, controlling the current levels in audio amplifiers, controlling the output power in DC-DC converters, rendering AC to DC power control, and controlling the time base for micro controllers, among various other applications.The working principle of HUF75639S3ST is quite simple. When the gate voltage is low, the source and drain require very little current to be switched on, hence resulting in a very low voltage drop across the device. Conversely, when the gate voltage is high, the voltage drop across the device increases, resulting in the MOSFET needing more current to be switched on, and bringing the voltage down across the device.When the required gate voltage is applied, the insulated gate terminates the current in the semiconductor, giving uninterrupted operation and allowing the device to be integrated into many applications as a switch. This guarantees excellent power performance as compared to other transistors.The advantages of HUF75639S3ST also extend to its high breakdown voltage, low gate threshold voltage, low gate input capacitance, quick switching time and very low on-state resistance. Furthermore, it does not require a heavy gate drive circuit, and can easily be mounted on a printed circuit board and connected to other components.Overall, HUF75639S3ST is an excellent choice for any application that demands quick on/off switching and needs to be operated at high voltages. With its multiple features and lightweight construction, this device is sure to provide optimum performance and energy efficiency to any electronics project.
The specific data is subject to PDF, and the above content is for reference
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