Allicdata Part #: | HUF75645S3S-ND |
Manufacturer Part#: |
HUF75645S3S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 75A D2PAK |
More Detail: | N-Channel 100V 75A (Tc) 310W (Tc) Surface Mount D²... |
DataSheet: | HUF75645S3S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 238nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3790pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 310W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263AB) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The HUF75645S3S is a single N-channel enhancement-mode transistor featuring a low on-state resistance and fast switching times for use in both low and medium voltage applications. In particular, it is well suited for use in battery management systems, power amplifier switching, and motor control applications. This device is available in a variety of packages, including the conventional TO-220 and the environmentally friendly PowerDI123.
The basic working principle of the HUF75645S3S is the same as that of any other MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). In a MOSFET, the voltage applied to two terminals determines the current flow. The two terminals are called the drain and the source. When there is a difference in voltage between the drain and the source, a channel is formed between the two and current begins to flow. The voltage applied to a third terminal, called the gate, determines the size of the channel and thereby the amount of current flowing through it.
The HUF75645S3S is an enhancement-mode MOSFET, meaning that when a voltage is applied to the gate, the current through the channel increases. Conversely, when the voltage is removed from the gate, the current flows through the channel decreases. This feature is ideal for applications where the goal is to control the current flow through the device. It also has a low on-state resistance of 4 Ω, which helps to reduce power loss, making it a good choice for applications that require low power dissipation.
The HUF75645S3S is a versatile device that can be used in a variety of applications. In battery management systems, it is used to control the charging and discharging of batteries by switching the current on and off as needed. In power amplifier switching circuits, it is used to control the flow of current to and from the amplifier, allowing for precise control of the audio signal being amplified. And in motor control applications, it can be used to control the speed, direction, and torque of motors.
The HUF75645S3S is an excellent choice for a wide range of applications, thanks to its low on-state resistance, fast switching times, and versatility. It is available in a variety of packages, making it compatible with a range of specific device applications. Whether it is used for battery management, power amplifier control, or motor control, the HUF75645S3S is an ideal choice for any system in need of precise control of current flow.
The specific data is subject to PDF, and the above content is for reference
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