Allicdata Part #: | HUF75829D3ST-ND |
Manufacturer Part#: |
HUF75829D3ST |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 18A DPAK |
More Detail: | N-Channel 150V 18A (Tc) 110W (Tc) Surface Mount TO... |
DataSheet: | HUF75829D3ST Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1080pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 20V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 18A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
When it comes to the application field and working principle of HUF75829D3ST, the transistor is part of a large family known as field-effect transistors (FETs). FETs are a popular type of transistor with many variations, including metal-oxide-semiconductor FETs (MOSFETs), junction FETs (JFETs) and insulated-gate FETs (IGFETs). HUF75829D3ST is a type of single FETs (also known as SFETs), which are commonly used in audio and power circuit applications.
Single FETs find their home in a variety of electronic designs and serve various functions. Generally, they are used to amplify, switch or otherwise condition electrical signals and current. SFETs are commonly used in preamps, frequency-sensitive filters, power converters and voltage regulators. They can handle large currents, and their low power consumption is one of their biggest advantages.
The structure and operation of a single FET is fairly simple. It consists of three terminals, known as the source, drain and gate. The gate is connected to a control circuit, which can either switch the device on or off, or control its power gain. When a voltage is applied to the gate, it allows current to flow from the source to the drain.
The single FET\'s ability to control current is determined by its geometry and semiconductor material used. Generally, the source and drain are made of metal, and the gate is typically aluminum or gold. By controlling the voltage between the gate and the source, the current going through the single FET can be controlled, allowing it to act as either a switch or an amplifier.
Also, depending on how it\'s wired, a single FET can be used to amplify audio signals, reduce noise in high-frequency applications, or switch high-currents in power-conversion systems. It is also used in instrumentation and radio-frequency amplifiers.
With their low power consumption and ability to provide effective switching and amplification, single FETs have become a popular choice for many electronics designs. They are relatively simple to use, and their relatively low cost makes them an excellent value for the money.
The specific data is subject to PDF, and the above content is for reference
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