HUF75831SK8T

HUF75831SK8T Application Field and Working Principle

The HUF75831SK8T is a discrete, low-voltage, N-channel thin-film-transistor (TFT) with an ultra-low on-resistance of 5.8mΩ and a high current rating of 82A. It belongs to Fairchild Semiconductor’s Ultra-low On Resistance FET family and has been designed to provide improved performance, reliability, and cost efficiency in low-voltage and low-power applications where power dissipation and current handling capability are critical.

The HUF75831SK8T is available in a thermally enhanced PowerPAK® SO-8 package which features a very low on-resistance with low thermal resistance and excellent current handling capability.The device also offers high efficiency and low EMI/RFI noise, resulting in improved system performance. Furthermore, the device has an integrated reverse EMF protection feature which offers additional safety and EMI/RFI noise reduction.

Uses & Applications

The HUF75831SK8T is a low-voltage and low-power device that has been designed for use in switching applications such as power supplies and motor drive applications. It is particularly well-suited to applications where low conductive losses and improved energy efficiency are desired. Additionally, the device is suitable for linear applications, such as voltage regulators and battery charging systems, due to its low on-resistance and low gate charge characteristics.

Working Principle

The working principle of the HUF75831SK8T is based on the principle of an insulated gate field-effect transistor (IGFET). In this circuit, the electrical current flow is controlled by the voltage applied to the gate. When the voltage is changed, the current flow through the device is changed accordingly. This p-type MOSFET has two terminals: the source, which is the negative potential, and the drain, which is the positive potential. When a positive voltage is applied to the gate, current flows from the source to the drain and vice versa when a negative voltage is applied to the gate. This allows for the transmission of electrical signals.

Overall, the HUF75831SK8T is a powerful, low-voltage and low-power N-channel MOSFET that is designed to provide improved performance, reliability and cost efficiency in switching and linear applications. The device is available in a thermally enhanced PowerPAK® SO-8 package and offers versatile operation through its principle of electrical current flow control by voltage. With its high current rating and low on-resistance, the device is ideal for applications that require a high degree of efficiency and low power dissipation.