Allicdata Part #: | HUF75842S3S-ND |
Manufacturer Part#: |
HUF75842S3S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 43A D2PAK |
More Detail: | N-Channel 150V 43A (Tc) 230W (Tc) Surface Mount D²... |
DataSheet: | HUF75842S3S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 150V |
Current - Continuous Drain (Id) @ 25°C: | 43A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 42 mOhm @ 43A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 175nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2730pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 230W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263AB) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Transistors - FETs, MOSFETs - Single
The HUF75842S3S part is a N-Channel MOSFET produced by Toshiba that is rated for a drain to source voltage of 55V and a drain current of 14A. N-Channel MOSFETs in general are used for power switching applications, such as a DC motor driver or a solenoid. The HUF75842S3S specifically has a 5.4Ohm drain to source on resistance (RDS(ON)) which makes it ideal for applications requiring high efficiency, such as when large currents are flowing and a low voltage drop across the switch is desired.
Operation
At the heart of every MOSFET, there is a set of three terminals: Gate, Drain, and Source. The Gate, Drain, and Source pins are responsible for controlling the conductivity of the MOSFET. When gate voltage is applied, current flows from the drain to the source, and the device is in its on-state. The magnitude of the gate voltage, compared to the source voltage, is what dictates the drain-to-source current.
When gate voltage is not applied, the device will be in its off-state. This off-state is also known as the cut-off state, as in this mode, no current will flow between the drain and the source, effectively cutting-off the current.
The HUF75842S3S is a N-Channel Enhancement mode MOSFET. This means that to turn the device on, a positive gate voltage must be applied. When the gate voltage is less than the source voltage by more than 0.5V, the device will be off. For applications where more than 0.5V of gate drive is needed to achieve the desired current limit, it can be beneficial to use a N-Channel Enhancement mode MOSFET.
Applications
The HUF75842S3S can be used in a variety of applications, including DC motor driver, LED drivers, switch-mode regulators, and remote sensor applications. It can also be used as a power switch in applications such as ATX power supplies, servers, and gaming consoles.
Due to its low on-state resistance and high-current capabilities, the HUF75842S3S is also used for switching large currents and for higher voltage applications such as industrial control applications and automotive applications.
Conclusion
The HUF75842S3S part is a versatile N-Channel MOSFET that can be used in a wide variety of applications, ranging from low-power industrial controls to high-power automotive applications. The device’s low RDS(ON) makes it ideal for applications requiring high efficiency, such as when large currents are flowing.
The specific data is subject to PDF, and the above content is for reference
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